Abstract:This paper thoroughly analyses the role of drift in the sensitive region in the single-event effect (SEE), with the aim of enhancing the single-particle radiation resistance of N-type metal-oxide semiconductor field-effect transistors (MOSFETs). It proposes a design for a Si-based device structure that extends the lightly doped source–drain region of the N-channel metal-oxide semiconductor (NMOS), thereby moderating the electric field of the sensitive region. This design leads to a 15.69% decrease in the charge collected at the leaky end of the device under the standard irradiation conditions. On this basis, a device structure is further proposed to form a composite metal-oxide semiconductor (MOS) by connecting a pn junction at the lightly doped source–drain end. By adding two charge paths, the leakage collection charge is further reduced by 13.85% under standard irradiation conditions. Moreover, the deterioration of the drive current in the purely growing lightly doped source–drain region can be further improved. Simulations of single-event effects under different irradiation conditions show that the device has good resistance to single-event irradiation, and the composite MOS structure smoothly converges to a 14.65% reduction in drain collection charge between 0.2 pC/μm and 1 pC/μm Linear Energy Transfer (LET) values. The incidence position at the source-to-channel interface collects the highest charge reduction rate of 28.23%. The collecting charge reduction rate is maximum, at 17.12%, when the incidence is at a 45-degree angle towards the source.

Simulating Threshold Voltage Shift of MOS Devices Due to Radiation in the Low-dose Range

A New Threshold Voltage Shift Model Due to Radiation in Fully-Depleted SOI MOSFET

A Phenomenological MOSFET Model Including Total Dose Radiation Effects at a High Total Dose

Synergistic Effects Simulation of MOSFET by Control Volume Finite Element Method

A Model for Radiation-Induced Off-State Leakage Current in N-channel Metal-Oxide-semiconductor Transistors with Shallow Trench Isolation

Shift of Transitions Between Partially and Fully-Depleted Behavior in SOI MOSFET due to Radiation

Simulation of Threshold Voltage Adjustment by B+ Implantation for Pmos-Radfet Application

Combined Effect of TID Radiation and Electrical Stress on NMOSFETs

Study of the Dose Rate Effect of 180 Nm Nmosfets

γ-Radiation Total Dose Effects of Different Sized MOS Devices

Experimeatal Study on MOSFET under Irradiation Condition

A Short-Channel SOI MOSFET Model Considering Total Dose Effects

Total-Ionizing-Dose Response of MoS2 Transistors with ZrO2 and h-BN Gate Dielectrics

Carrier Distribution And Threshold Voltage Model In N- And P-Mosfet

Investigation of Irradiation Effects and Model Parameter Extraction for VDMOS Field Effect Transistor Exposed to Gamma Rays

Threshold Voltage Adjustment of Pmos-Radiation Field-Effect Transistor with Thick Thermal Oxide

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

The Total Dose Radiation Characteristics of Short Channel CMOS/SIMOX Devices

A New Type of Si-Based MOSFET for Radiation Reinforcement

MOS device threshold voltage model considering quantum mechanical effect including multi-subband occupation

Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET