Abstract:A new analytical current-voltage (I-V) model for submicrometer and deep-submicrometer metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed based on a newly developed charge-control model for the metal-oxide-semiconductor structure. Threshold-voltage shift due to quantum mechanical effects, finite inversion layer thickness effects (inversion layer capacitance), as well as increased depletion layer charge density after the strong inversion point are incorporated in the model. Inversion layer charge density with respect to the gate voltage from depletion through weak inversion to strong inversion regions with smooth transition between different regions is given by one expression. Two-dimensional short channel effects such as channel length modulation, drain-induced barrier lowering, mobility degradation, and carrier velocity saturation, as well as polysilicon depletion effects are included in the I-V model. Model results are compared with both numerical results of carrier sheet density and surface potential in the channel, and experimental results of I-V data for submicrometer and deep-submicrometer MOSFETs down to 0.09-/spl mu/m effective gate length and the accuracy of the model are demonstrated.

Carrier Distribution And Threshold Voltage Model In N- And P-Mosfet

Thorough Analysis of Quantum Mechanical Effects on Mos Structure Characteristics in Threshold Region

MOS Structure Threshold Voltage Model by Rigorously Considering Quantum Mechanical Effect

MOS device threshold voltage model considering quantum mechanical effect including multi-subband occupation

Quantum Mechanical Effects on Deep-Submicron MOSFET Subthreshold Characteristics

Analytical Charge-Control and I-V Model for Submicrometer Anddeep-Submicrometer MOSFETs Fully Comprising Quantum Mechanical Effects

Simulation of Advanced N-Mosfet Emphasizing Quantum Mechanical Effects on 2-D Characteristics

Quantum Mechanical Consideration On Mosfet'S Characteristics And Scaling

Quantum Mechanical Effects on the Threshold Voltage of Surrounding-Gate Mosfets

Analytical Charge Model for MOSFETs with 2-D Quantum Mechanical Effects

Quantum Mechanical Carrier Transport and Nano-scale MOS Modeling

Modeling On Direct Tunneling Current In Ultra-Thin Oxide Nmosfet Considering Quantum Mechanics

Physical-Based Threshold Voltage and Mobility Models Including Shallow Trench Isolation Stress Effect on Nmosfets

A Unified Carrier-Transport Model for the Nanoscale Surrounding-Gate MOSFET Comprising Quantum–Mechanical Effects

Extended Version of Carrier-Based Analytical Model to Account for the Doped Effect of Symmetric Double-Gate MOSFETs

Compact I-V Model for Sub-100nm Bulk Silicon MOSFETs

Characterization and Modelling of Carrier Distribution and Gate Capacitance in MOS Structure Inversion Layer

Quantum Mechanical Effects on the Threshold Voltage of Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Threshold Voltage Correction Model For Quantum Short Channel Effects In Decanano-Scaled Mosfets

Modeling and Analysis for MOS Capacitance of TSV Considering Temperature Dependence

A Unified Charge Model Comprising Both 2D Quantum Mechanical Effects in Channels and in Poly-Silicon Gates of MOSFETs