Abstract:A new analytical current-voltage (I-V) model for submicrometer and deep-submicrometer metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed based on a newly developed charge-control model for the metal-oxide-semiconductor structure. Threshold-voltage shift due to quantum mechanical effects, finite inversion layer thickness effects (inversion layer capacitance), as well as increased depletion layer charge density after the strong inversion point are incorporated in the model. Inversion layer charge density with respect to the gate voltage from depletion through weak inversion to strong inversion regions with smooth transition between different regions is given by one expression. Two-dimensional short channel effects such as channel length modulation, drain-induced barrier lowering, mobility degradation, and carrier velocity saturation, as well as polysilicon depletion effects are included in the I-V model. Model results are compared with both numerical results of carrier sheet density and surface potential in the channel, and experimental results of I-V data for submicrometer and deep-submicrometer MOSFETs down to 0.09-/spl mu/m effective gate length and the accuracy of the model are demonstrated.

Modeling and Analysis for MOS Capacitance of TSV Considering Temperature Dependence

Electrothermal modelling of through silicon via (TSV) interconnects

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

Electrical–Thermal Cosimulation of Coaxial TSVs with Temperature-Dependent MOS Effect Using Equivalent Circuit Models

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Electrothermal investigation on through silicon multi-walled carbon nanotube via interconnects

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Accurate Modeling of the Capacitance of Through-Silicon Via Considering Minority Carrier Effects

Characteristics of Coupling Capacitance Between Signal-Ground TSVs Considering MOS Effect in Silicon Interposers

Analysis and Modeling of Temperature Dependence of I-V behavior in Silicon Carbide MOSFETs

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via

Full RLGC Model Extraction of Through Silicon Via (TSV) with Charge Distribution Effects

Modeling of Through-Silicon Via (TSV) Interposer Considering Depletion Capacitance and Substrate Layer Thickness Effects

A carrier-based analytic model for undoped Ultra-Thin-Body Silicon-on-insulator (UTB-SOI)MOSFETS

Physical Analysis and Modeling of the Nonlinear Miller Capacitance for SiC MOSFET.

A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator ( UTB-SOI ) MOSFETs

Electrical-thermal Co-Analysis of Through Silicon Via with Equivalent Circuit Model

PDN Impedance Modeling for Multiple Through Vias Array in Doped Silicon

Analytical Charge-Control and I-V Model for Submicrometer Anddeep-Submicrometer MOSFETs Fully Comprising Quantum Mechanical Effects

Multi-physics modeling of through-silicon vias with equivalent-circuit approach

A Rigorous Model for Through-Silicon Vias with Ohmic Contact in Silicon Interposer