Abstract:Inspired by Through-silicon vias (TSV), a capacitor structure, called Through-silicon Capacitor(TSC), integrates a MIM capacitor in the silicon interposer. TSC requires less chip area and offers higher capacitance density, which can be used as high-value decoupling capacitor in three dimensional integrated circuits (3D-IC). However, TSC has the drawback of complex preparation process and equivalent series resistance. The insulator layer material and quality in the MIM capacitor can also greatly affect its performance. In this study, the thermal-mechanical stress simulation shows that the minimum centre distance of two TSCs is 92 μm for further study. Then the capacitance formula of TSC is derived qualitatively, and several key parameters such as the the insulator layer thickness, dielectric constant, trench diameter and trench depth are designed for electrical simulation. With a series of improvements on these parameters, the TSC capacitance density can be increased to 467.09 nF/mm 2 . Then the equivalent circuit diagram of TSC is designed, and the parasitic effect shows the increase of electrode thickness deeply decreases the parasitic resistance. The variation of parasitic inductance is not closely related to trench size. The performance of TSC can be greatly optimized in terms of electrico-thermal-mechanical stress properties, whose design is also compatible with the IC process.

Accurate Modeling of the Capacitance of Through-Silicon Via Considering Minority Carrier Effects

Accurate Electrical Modeling of Through Silicon Via with Minority Carrier Redistribution Effect

Electrothermal modelling of through silicon via (TSV) interconnects

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Modeling of a Pair of Annular Through Silicon Vias (TSV)

Modeling and Analysis for MOS Capacitance of TSV Considering Temperature Dependence

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

Modeling of Through-Silicon Via (TSV) Interposer Considering Depletion Capacitance and Substrate Layer Thickness Effects

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Full RLGC Model Extraction of Through Silicon Via (TSV) with Charge Distribution Effects

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

A Rigorous Model for Through-Silicon Vias with Ohmic Contact in Silicon Interposer

Modeling the effect of charges in the back side passivation layer on through silicon via (TSV) capacitance after wafer thinning

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Coupling capacitance extraction in through-silicon via (TSV) arrays

Multi-physics modeling of through-silicon vias with equivalent-circuit approach

Electrothermal investigation on through silicon multi-walled carbon nanotube via interconnects

Electrical Simulation Model to Improve Through-Silicon Capacitor(TSC) Capacitance

Capacitive coupling analysis of TSV array in 3D packaging