Abstract:The 3-D integration of integrated circuits based on through-silicon via (TSV) is a promising technology to achieve high-performance, multifunctional, and heterogeneous microsystem. The voltage-dependent and frequency-dependent TSV capacitances have a predominant impact on system performance. Accordingly, accurate electrical modeling of TSV capacitance is critical for system design. This article proposes an accurate small-signal analysis method capable of modeling the low-frequency and high-frequency TSV capacitances. The contribution of both fixed carriers and mobile carriers are considered in the model. Moreover, the minority carrier effects are incorporated to model the high-frequency capacitance accurately. The proposed model shows a good correlation with measurement and device-level simulation. Analysis and experiment demonstrate neglecting the minority carrier effects lead to huge inaccuracy of TSV capacitance, which can be up to 30.1% in the strong inversion region. Therefore, it is important to consider the minority carrier effects in the modeling of high-frequency TSV capacitance. In addition, the proposed model consumes small computational cost benefit from efficient iterative procedures.

Modeling of Through-Silicon Via (TSV) Interposer Considering Depletion Capacitance and Substrate Layer Thickness Effects

Electrothermal modelling of through silicon via (TSV) interconnects

Modeling the Bottom-Up Filling of Through Silicon Vias with Different Additives

Influence of Electroplating Current Density on Through Silicon Via Filling

A Rigorous Model for Through-Silicon Vias with Ohmic Contact in Silicon Interposer

Modeling of a Pair of Annular Through Silicon Vias (TSV)

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

PDN Impedance Modeling for Multiple Through Vias Array in Doped Silicon

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Full RLGC Model Extraction of Through Silicon Via (TSV) with Charge Distribution Effects

Modeling Simplification for Thermal Mechanical Stress Analysis of TSV Interposer Stack

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

Modeling the effect of charges in the back side passivation layer on through silicon via (TSV) capacitance after wafer thinning

Accurate Modeling of the Capacitance of Through-Silicon Via Considering Minority Carrier Effects

Multi-physics modeling of through-silicon vias with equivalent-circuit approach

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration