Abstract:A new analytical current-voltage (I-V) model for submicrometer and deep-submicrometer metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed based on a newly developed charge-control model for the metal-oxide-semiconductor structure. Threshold-voltage shift due to quantum mechanical effects, finite inversion layer thickness effects (inversion layer capacitance), as well as increased depletion layer charge density after the strong inversion point are incorporated in the model. Inversion layer charge density with respect to the gate voltage from depletion through weak inversion to strong inversion regions with smooth transition between different regions is given by one expression. Two-dimensional short channel effects such as channel length modulation, drain-induced barrier lowering, mobility degradation, and carrier velocity saturation, as well as polysilicon depletion effects are included in the I-V model. Model results are compared with both numerical results of carrier sheet density and surface potential in the channel, and experimental results of I-V data for submicrometer and deep-submicrometer MOSFETs down to 0.09-/spl mu/m effective gate length and the accuracy of the model are demonstrated.

MOS device threshold voltage model considering quantum mechanical effect including multi-subband occupation

MOS Structure Threshold Voltage Model by Rigorously Considering Quantum Mechanical Effect

Quantum Mechanical Effects on Deep-Submicron MOSFET Subthreshold Characteristics

Thorough Analysis of Quantum Mechanical Effects on Mos Structure Characteristics in Threshold Region

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Carrier Distribution And Threshold Voltage Model In N- And P-Mosfet

Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

Quantum Mechanical Effects on the Threshold Voltage of Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Threshold voltage correction model for quantum short channel

Quantum Mechanical Consideration On Mosfet'S Characteristics And Scaling

Analytical Charge-Control and I-V Model for Submicrometer Anddeep-Submicrometer MOSFETs Fully Comprising Quantum Mechanical Effects

Modeling On Direct Tunneling Current In Ultra-Thin Oxide Nmosfet Considering Quantum Mechanics

Analytical Charge Model for MOSFETs with 2-D Quantum Mechanical Effects

Threshold Voltage Correction Model For Quantum Short Channel Effects In Decanano-Scaled Mosfets

An Analytic Model to Account for Quantum–Mechanical Effects of MOSFETs Using a Parabolic Potential Well Approximation

A two-dimensional physically-based current model for deep-submicrometer SOI dynamic threshold-voltage MOSFET

C-VCharacterization in MOS Structure Inversion Layer Including Quantum Mechanical Effects

Quantum-Mechanical Analytical Model of Ultra-Thin Body Device

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Analytic model for subthreshold channel potential and threshold voltage of the Schottky-barrier surrounding-gate MOSFETS