Abstract:A new analytical current-voltage (I-V) model for submicrometer and deep-submicrometer metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed based on a newly developed charge-control model for the metal-oxide-semiconductor structure. Threshold-voltage shift due to quantum mechanical effects, finite inversion layer thickness effects (inversion layer capacitance), as well as increased depletion layer charge density after the strong inversion point are incorporated in the model. Inversion layer charge density with respect to the gate voltage from depletion through weak inversion to strong inversion regions with smooth transition between different regions is given by one expression. Two-dimensional short channel effects such as channel length modulation, drain-induced barrier lowering, mobility degradation, and carrier velocity saturation, as well as polysilicon depletion effects are included in the I-V model. Model results are compared with both numerical results of carrier sheet density and surface potential in the channel, and experimental results of I-V data for submicrometer and deep-submicrometer MOSFETs down to 0.09-/spl mu/m effective gate length and the accuracy of the model are demonstrated.

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MOS device threshold voltage model considering quantum mechanical effect including multi-subband occupation

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Analytical Short-Channel Behavior Models of Junctionless Cylindrical Surrounding-Gate Mosfets

An Exact Analytic Model of Undoped Body MOSFETs using the SPP Approach

An Analytic Model of the Silicon-Based Nanowire Schottky Barrier Mosfet

Analytic MOSFET surface potential model with inclusion of poly-gate accumulation, depletion, and inversion effects

Quantum-Mechanical Analytical Model of Ultra-Thin Body Device

MOS Structure Threshold Voltage Model by Rigorously Considering Quantum Mechanical Effect

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An explicit surface potential model of bulk-MOSFETs with inclusion of poly-gate accumulation, depletion, and inversion effects

A Quantum-Confinement Model for Surrounding-Gate MOSFETS from Subthreshold to Strong-Inversion Regions

Analytical Charge-Control and I-V Model for Submicrometer Anddeep-Submicrometer MOSFETs Fully Comprising Quantum Mechanical Effects

An Analytic Model for Channel Potential and Subthreshold Swing of the Symmetric and Asymmetric Double-Gate MOSFETs

An analytic potential-based model for undoped nanoscale surrounding-gate MOSFETs

A Two-Dimensional Analytical Model for Short Channel Junctionless Double-Gate MOSFETs

A Physics Based Analytical Model Of Undoped Body Mosfets

Quantum Mechanical Consideration On Mosfet'S Characteristics And Scaling

A Study of Subthreshold Behavior of Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs from an Electrostatic Potential Viewpoint