Abstract:Based on a self-consistent Schrodinger-Poisson solver and top-of-the-barrier model, a quantum transport simulator of p-type gate-all-around nanosheet FET is developed. The effects of material (Si/Ge), stress, crystallographic orientation, and cross-sectional size are deeply explored by numerical simulations for the device performance at the sub-3 nm technology node. A strain-dependent 6-band kmiddotp Hamiltonian is incorporated into the model for a more accurate calculation of E-k dispersion in the strain-perturbed valence band structure, where the curvature, energy shift, and splitting of subbands are investigated in detail for hole transport properties. Further, the effect of channel engineering is comprehensively analyzed, by evaluating density-of-states effective mass, average injection velocity, mobility, current density distributions, and the current-voltage characteristics. An effective performance improvement from 2 GPa compressive stress is obtained in [100]/(001) and [110]/(001) channels, with a 7% enhancement of ON-current in Ge nanosheet FETs. While a wider channel crosssection improves the drive current by increasing the effective channel width, a smaller cross-sectional width yields an average increase up to 29% in the ON-state injection velocity due to stronger quantum confinement.

Quantum Mechanical Effects on Deep-Submicron MOSFET Subthreshold Characteristics

MOS device threshold voltage model considering quantum mechanical effect including multi-subband occupation

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Quantum Mechanical Consideration On Mosfet'S Characteristics And Scaling

Thorough Analysis of Quantum Mechanical Effects on Mos Structure Characteristics in Threshold Region

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Quantum Mechanical Effects on the Threshold Voltage of Surrounding-Gate Mosfets

Carrier Distribution And Threshold Voltage Model In N- And P-Mosfet

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Threshold voltage correction model for quantum short channel

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Simulation of Advanced N-Mosfet Emphasizing Quantum Mechanical Effects on 2-D Characteristics

Threshold Voltage Correction Model For Quantum Short Channel Effects In Decanano-Scaled Mosfets

Analytical Charge Model for MOSFETs with 2-D Quantum Mechanical Effects

The Influence of Tunneling Effect and Inversion Layer Quantization Effect on Threshold Voltage of Deep Submicron Mosfets

Quantum Mechanical Carrier Transport and Nano-scale MOS Modeling

Quantum-mechanical Study on the Electron Effective Mobility of Surrounding-Gate Nmosfets

Quantum Mechanical Effects on the Threshold Voltage of Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

A two-dimensional physically-based current model for deep-submicrometer SOI dynamic threshold-voltage MOSFET

Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors