Abstract:In this article, the degradation mechanisms of radiation-hardened vertical double-diffused MOSFETs (VD-MOSFET) experiencing gamma ray irradiation and annealing sequentially experiment device and simultaneously experiment device (Si-ED) are studied and compared. Experiments demonstrate that the Si-ED irradiated with gate bias (+12 V) has a lower oxide-trapped charges increment ( $Delta {N}_{ ext {ot}})$ and higher interface states increment ( $Delta {N}_{ ext {it}})$ , compared to those of sequential experiment device (Se-ED). However, for Si-ED irradiated with drain bias (200 V), it shows lower $Delta {N}_{ ext {ot}}$ and $Delta {N}_{ ext {it}}$ than those of Se-EDs, which is similar to that observed in the case of devices irradiated with three-terminal bias (200-V drain bias, −10-V gate bias, and source grounded). In addition, for all cases, it is seen that the drain-biased devices own a larger $Delta {N}_{ ext {ot}}$ but a smaller $Delta {N}_{ ext {it}}$ , compared to those of gate-biased ones, and the three-terminal-biased devices show the lowest, especially in Si-ED. As a result, the variations of $Delta {N}_{ ext {ot}}$ and $Delta {N}_{ ext {it}}$ could cause different degradations of threshold voltage, breakdown voltage, leakage current, and ON-state resistance of devices, which would inevitably threaten the proper functioning of electrical systems. Moreover, in this article, it is concluded that the existing standard, i.e., accelerated annealing after irradiation, cannot reflect the actual radiation reliability of devices. Other evaluation methods regarding total ionizing dose (TID) need to be further explored comprehensively.

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A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

Physical Model for Ionizing Radiation Damage in Partially Depleted SOI Transistors

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Charge Buildup and Spatial Distribution of Interface Traps in 65 nm pMOSFETs Irradiated to Ultra-high Doses

Modeling of Surface Damage at the Si/SiO$_2$-interface of Irradiated MOS-capacitors

J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon

TCAD Modeling of Nanoscale Bulk FinFET Structures with Account of Radiation Exposure

Investigation of Irradiation Effects and Model Parameter Extraction for VDMOS Field Effect Transistor Exposed to Gamma Rays

Impact of Proton-Radiation-Induced Spacer Damage on the Dc Characteristics Degradation in Deep-Submicron Metal-Oxide-Semiconductor Field Effect Transistors

A Model for Radiation-Induced Off-State Leakage Current in N-channel Metal-Oxide-semiconductor Transistors with Shallow Trench Isolation

Effects of 5 MeV Proton Irradiation on Nitrided SiO2/4H-SiC MOS Capacitors and the Related Mechanisms

Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies

A Short-Channel SOI MOSFET Model Considering Total Dose Effects

Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses

A New Threshold Voltage Shift Model Due to Radiation in Fully-Depleted SOI MOSFET

Study of radiation damage induced by 12 keV X-rays in MOS structures built on high resistivity n-type silicon

Trap-induced Electrical Degradation in Edge-Termination-hardened NiO/β-Ga2O3 Heterojunction under 10 MeV Fluence-Dependent Proton Irradiations

Improved Model on Buried-Oxide Damage Induced by Total-Ionizing-Dose Effect for HV SOI LDMOS

Radiation-induced Charge Trapping in Si-MOS Capacitors with HfO2/SiO2 Gate Dielectrics

Degradation of VDMOS Under Simultaneous and Sequential Stress of Gamma Ray Irradiation and Annealing Process