Abstract:Irradiation damage is a key issue for the reliability of semiconductor devices under extreme environments. For decades, the ionizing-irradiation-induced damage in transistors with silica-silicon (SiO2 -Si) structures at room temperature has been modeled by a uniform generation of <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> centers in the bulk silica region through the capture of irradiation-induced holes, and an irreversible conversion from <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> to Pb centers at the SiO2 /Si interface through reactions with hydrogen molecules (H2 ). However, the traditional model fails to explain experimentally-observed dose dependence of the defect concentrations, especially at low dose rate. Here, it is proposed that the generation of <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> centers is decelerated because the holes migrate dispersively in disordered silica and the diffusion coefficient decays as the irradiation goes on. It is also proposed that the conversion between <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> and Pb centers is reversible because the huge activation energy of the reverse reaction can be reduced by a "phonon-kick" effect of the vibrational energy of H2 and Pb centers transferred from nearby nonradiative recombination centers. Experimental studies are carried out to demonstrate that the derived analytic model based on these two new concepts can consistently explain the fundamental but puzzling dose dependence of the defect concentrations for an extremely wide dose rate range.

Improved Buildup Model for Radiation-Induced Defects in MOSFET Isolation Oxides

Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

Physical Model for Ionizing Radiation Damage in Partially Depleted SOI Transistors

A Model for Radiation-Induced Off-State Leakage Current in N-channel Metal-Oxide-semiconductor Transistors with Shallow Trench Isolation

Total-Ionizing-Dose Radiation-Induced Electric Field Redistribution Model and Hardening Method for SGT MOSFET

Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies

A New Threshold Voltage Shift Model Due to Radiation in Fully-Depleted SOI MOSFET

A Model for Neutron Radiation Damage in Metal Oxide Semiconductor (MOS) Structures

Numerical Modeling of Oxide and Interface Charge Buildup in Field Oxide Transistors During Irradiation and Annealing

A Phenomenological MOSFET Model Including Total Dose Radiation Effects at a High Total Dose

Simulating Threshold Voltage Shift of MOS Devices Due to Radiation in the Low-dose Range

General Model for Defect Dynamics in Ionizing-Irradiated SiO<sub>2</sub>-Si Structures

General Model for Defect Dynamics in Ionizing‐Irradiated SiO 2 ‐Si Structures

TCAD Modeling of Nanoscale Bulk FinFET Structures with Account of Radiation Exposure

An Improved Model on Buried-Oxide Damage for Total-Ionizing-Dose Effect on HV SOI LDMOS

Analytical Model for Total Ionizing Dose-Induced Excess Base Current in PNP BJTs

Improved Model on Buried-Oxide Damage Induced by Total-Ionizing-Dose Effect for HV SOI LDMOS

Charge Buildup and Spatial Distribution of Interface Traps in 65 nm pMOSFETs Irradiated to Ultra-high Doses

Influence of Doubly-Hydrogenated Oxygen Vacancy on the TID Effect of MOS Devices

Modeling and Simulation-Based Layout Optimization for Tolerance to TID Effect on n-MOSFET