Abstract:Semiconductor quantum dots (QDs) have unique discrete energy levels determined by the particle size and material. Therefore, they have potential applications as novel optical and electronic devices. Among those, colloidal group II-VI semiconductor quantum dots stand out for their facile synthesis and band gaps aligned with the visible light spectrum. However, the electrical characterization studies of an individual quantum dot necessitate the size of nanogap electrodes being equal to the size of the quantum dot, which has conventionally been evaluated using techniques such as scanning tunneling microscopy (STM) and nanogaps fabricated by electromigration. The complexity of device fabrication has restricted research in this area. Here, we present a pioneering approach for the electrical characterization of single-QD: heteroepitaxial-spherical (HS) Au/Pt nanogap electrodes. We fabricated transistors through chemisorption, an anchoring colloidal CdS QD (3.8 nm) between the HS-Au/Pt nanogap electrodes (gap separation: 4.5 nm). The resulting device functions as a quantum-dot single-electron transistor (QD-SET), showing resonant tunneling-an inherent characteristic of the QD. A steep current increase was observed at a negative voltage, apart from the theoretical single-electron tunneling current by Coulomb blockade phenomena, which agreed with the theoretical resonant tunneling current through a discrete energy level of the QD. This underscores the promise of HS-Au/Pt nanogap electrodes in realizing single-QD devices, offering a pathway toward unlocking their full potential.

Fabrication And Characteristics Of A Si Multiple-Quantum Dots Single Electron Transistor On Simox Substrate

Fabrication of nano-structure and study of Si-based single electron transistor

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Coulomb Staircases and Differential Conductance Oscillations in A Simox-Based Single-Electron Transistor

Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor

Fabrication and Characterization of a Single Electron Transistor Based on a Silicon-on-Insulator

Fabrication and Characteristics of Soi-Based Single-Electron Transistor with In-Plane Side Gates

Silicon Single Electron Transistors Aiming at a High Gate Modulation Factor

Coulomb Blockade Oscillations in Silicon Single-electron Transistor with a Strong Gate-dot Coupling

Fabrication Techniques of Nano-Structure

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

A simple and controlled single electron transistor based on doping modulation in silicon nanowires

Resonant tunneling in a colloidal CdS semiconductor quantum-dot single-electron transistor based on heteroepitaxial-spherical Au/Pt nanogap electrodes

Controlled fabrication of single electron transistors from single-walled carbon nanotubes

An N-Type Silicon Nanowire Dot Based Single-Electron Transistor

Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing

Si/SiGe quantum dot with superconducting single-electron transistor charge sensor

Fabrication And Characterization Of Single Electron Transistor On Soi

Single-Electron Transistor Based on Cobalt Oxide.

Light Emitting Transistors Using Silicon Quantum Dots in an Organic Matrix

Simulation and machine learning based analytical study of single electron transistor (SET)