Abstract:The class of organic–inorganic lead halides with perovskite crystal structures has recently emerged as promising materials for a variety of practical optoelectronic applications. In particular, hybrid halide perovskite quantum dots possess excellent intrinsic optoelectronic properties such as high color purity (full width at half-maximum of 24.59 nm) and photoluminescence quantum yields (92.7%). In this work, we demonstrate the use of perovskite quantum dot materials as an emissive layer of hybrid light-emitting transistors. To investigate the working mechanism of perovskite quantum dots in light-emitting transistors, we investigated the electrical and optical characteristics under both p-channel and n-channel operation. Using these materials, we have achieved perovskite quantum dot light-emitting transistors with high electron mobilities of up to 12.06 cm2·V–1 s–1, high brightness of up to 1.41 × 104 cd m–2, and enhanced external quantum efficiencies of up to 1.79% operating at a source–drain potential of 40 V.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c05537?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c05537</a>.Atomic force microscopy, LET output characteristics, electrical and optical characteristics of SY control LETs, perovskite QD LETs under p-channel operation, comparison of QD and SY emission characteristics, and schematic diagram of LET characterization system (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c05537/suppl_file/am0c05537_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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