Abstract:Developing high-performance Si-based light-emitting devices is the key step to realizing all-Si-based optical telecommunication. Usually, silica (SiO2) as the host matrix is used to passivate silicon nanocrystals, and a strong quantum confinement effect can be observed due to the large band offset between Si and SiO2 (~8.9 eV). Here, for further development of device properties, we fabricate Si nanocrystals (NCs)/SiC multilayers and study the changes in photoelectric properties of the LEDs induced by P dopants. PL peaks centered at 500 nm, 650 nm and 800 nm can be detected, which are attributed to surface states between SiC and Si NCs, amorphous SiC and Si NCs, respectively. PL intensities are first enhanced and then decreased after introducing P dopants. It is believed that the enhancement is due to passivation of the Si dangling bonds at the surface of Si NCs, while the suppression is ascribed to enhanced Auger recombination and new defects induced by excessive P dopants. Un-doped and P-doped LEDs based on Si NCs/SiC multilayers are fabricated and the performance is enhanced greatly after doping. As fitted, emission peaks near 500 nm and 750 nm can be detected. The current density-voltage properties indicate that the carrier transport process is dominated by FN tunneling mechanisms, while the linear relationship between the integrated EL intensity and injection current illustrates that the EL mechanism is attributed to recombination of electron–hole pairs at Si NCs induced by bipolar injection. After doping, the integrated EL intensities are enhanced by about an order of magnitude, indicating that EQE is greatly improved.

Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots

White light-emitting quantum dot diodes and tuning of luminescence processes

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Efficient silicon quantum dots light emitting diodes with an inverted device structure

Silicon-quantum-dot Light-Emitting Diodes with Varying Emission Layer Thickness

Bidirectional Direct-Current Electroluminescence from I-Mgxzn1−xo/n-zno/siox Double-Barrier Heterostructures on Si

Light-emitting Diodes Based on Colloidal Silicon Quantum Dots

Light-Emitting Diodes Based on Colloidal Silicon Quantum Dots with Octyl and Phenylpropyl Ligands.

Electroluminescence from Si quantum dots/SiO2 multilayers with ultrathin oxide layers due to bipolar injection

Quantum-Dot Blue Light Emitting Diodes Utilizing Organic/Inorganic Hybrid Structures

Study of dot size effect on electron emission from Si-QDs multiple-stacked structures

Light-Emitting Devices Based on Erbium-Doped Tio2/P(+)-Si Heterostructures: Engineering of Electroluminescence Via Aluminum Co-Doping

Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode

Silicon-Quantum-Dot Light-Emitting Diodes with Interlayer-Enhanced Hole Transport

Optimization of electro-luminescence performance of silicon quantum dots based light-emitting-diode

Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence

Electroluminescence with Micro-Watt Output from Ultra-Small Sized Si Quantum Dots/amorphous SiO2 Multilayers Prepared by Laser Crystallization Method

Light Emitting Transistors Using Silicon Quantum Dots in an Organic Matrix

Room Temperature Light Emission from Superatom-like Ge–Core/Si–Shell Quantum Dots

Electroluminescent Devices Based on Amorphous SiN/Si Quantum Dots/amorphous SiN Sandwiched Structures

Size-Dependent Electroluminescence From Si Quantum Dots Embedded In Amorphous Sic Matrix