Abstract:The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it challenging to achieve efficient light emission. We address this problem by strain engineering in ordered arrays of vertically close-stacked SiGe quantum dot (QD) pairs. The strain induced by the respective lower QD creates a preferential nucleation site for the upper one and strains the upper QD as well as the Si cap above it. Electrons are confined in the strain pockets in the Si cap, which leads to an enhanced wave function overlap with the heavy holes near the upper QD's apex. With a thickness of the Si spacer between the stacked QDs below 5 nm, we separated the functions of the two QDs: The role of the lower one is that of a pure stressor, whereas only the upper QD facilitates radiative recombination of QD-bound excitons. We report on the design and strain engineering of the QD pairs via strain-dependent Schrödinger-Poisson simulations, their implementation by molecular beam epitaxy, and a comprehensive study of their structural and optical properties in comparison with those of single-layer SiGe QD arrays. We find that the double QD arrangement shifts the thermal quenching of the photoluminescence signal at higher temperatures. Moreover, detrimental light emission from the QD-related wetting layers is suppressed in the double-QD configuration.

Study of dot size effect on electron emission from Si-QDs multiple-stacked structures

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots

White light-emitting quantum dot diodes and tuning of luminescence processes

The Structures and Properties of Si/SiO2 Core/shell Quantum Dots Studied by Density-Functional Tight-Binding Calculations

Optical studies of ZnO quantum dots grown on Si(0 0 1)

Enhanced Intraband Stark Effects in Stacked Inas/Gaas Self-Assembled Quantum Dots

Optical And Structural Investigation Of Stacked Ge Quantum Dots

Optical studies of ZnO quantum dots grown on Si(001)

Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots

Optical Properties of Amorphous Silicon Quantum Dots(a-Si QDs) with various dot size using Extended Hückel Theory

Size-Dependent Electroluminescence From Si Quantum Dots Embedded In Amorphous Sic Matrix

Quantum Size Effects on Exciton States in Indirect-Gap Quantum Dots

Photocurrent Study of Ge/Si Double Quantum Dots

Towards Controllable Growth of Self-Assembled Sige Single and Double Quantum Dot Nanostructures

Dot-Size Dependent Excitons in Droplet-Etched Cone-Shell GaAs Quantum Dots

Correlations of Photoluminescence and Size Evolution of Si Quantum Dots in Amorphous Silicon Carbide

Increased Conductance of Individual Self-Assembled GeSi Quantum Dots by Inter-Dot Coupling Studied by Conductive Atomic Force Microscopy

Electron Spin Resonance in P-doped Si Nanocrystals/sic Stacked Structures with Various Dot Sizes

The Emission Directionality of Electronic Intraband Transitions in Stacked Quantum Dots