Abstract:We investigate the nanoheteroepitaxy of SiGe and Ge quantum dots (QDs) grown on nanotips substrates realized in Si(001) wafers. Due to the lattice strain compliance, enabled by the nanometric size of the tip and the limited dot/substrate interface area, which helps to reduce dot/substrate interdiffusion, the strain and SiGe composition in the QDs could be decoupled. This demonstrates a key advantage of the nanoheteroepitaxy over the Stranski-Krastanow growth mechanism. Nearly semi-spherical, defect-free, ∼100 nm wide SiGe QDs with different Ge contents were successfully grown on the nanotips with high selectivity and size uniformity. On the dots, thin dielectric capping layers were deposited, improving the optical properties by the passivation of surface states. Intense photoluminescence was measured from all samples investigated with emission energy, intensity, and spectral linewidth dependent on the SiGe composition of the QDs and the different capping layers. Radiative recombination occurs in the QDs, and its energy matches the results of band-structure calculations that consider strain compliance between the QD and the tip. The nanotips arrangement and the selective growth of QDs allow to studying the PL emission from only 3-4 QDs, demonstrating a bright emission and the possibility of selective addressing. These findings will support the design of optoelectronic devices based on CMOS-compatible emitters.

Optical And Structural Investigation Of Stacked Ge Quantum Dots

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Optical study of Ge quantum dots and infrared photodetectors

Optical properties of Ge/Si quantum dot superlattices

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Optical Characterization of Ge Quantum Dots Grown on Porous Silicon by UHV/CVD

Densely packed Ge quantum dots grown on SiO2/Si substrate☆

Si-based Ge Quantum Dot Infrared Photodetectors

Study Of Self-Assembled Ge Quantum Dot Infrared Photodetectors

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Interface Interdiffusion Intensified by Formation of Quantum Dots

Mcrostructure and Optical Properties of Ge(Si) Dots Grown on Si

A Two-Stage Molecular Beam Epitaxial Growth Method to Fabricate Small and Uniform Ge Quantum Dots on Si(1 0 0)

Investigation of the Quantum Confinement Effects in Ge Dots by Electrical Measurements

High-density Ge Dots Grown on Si Substrate by Modified S-K Method

Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence

Structure and optical properties of the Ge and Sn quantum-dots

Systematic Studies of the Photoluminescence of Ge Quantum Dots Grown on Strained Si(0.7)Ge(0.3) Buffer Layer

Critical Thickness of Self-Assembled Ge Quantum Dot Superlattices

A two-stage molecular beam epitaxial growth method to fabricate small and uniform Ge quantum dots on Si(100)