Abstract:The effect of delta-doping on the performance of ten-period Ge/Si quantum-dot (QD) mid-infrared photodetectors (λmax≃3.4 μm) was investigated. Ge QDs fabricated by molecular-beam epitaxy at 500 °C are overgrown with Si at 600 °C. Each Si barrier contains a boron delta-doping layer located near the QD plane to provide holes to the dots. Within the sample set, we examined devices with different positions of the δ-doping layer with respect to the QD plane, different distances between the δ-doping layer and the QD plane, and different doping densities. All detectors show pronounced photovoltaic behavior implying the presence of an internal inversion asymmetry. We observed a reversal of the voltage dependence of responsivity with respect to zero bias when the δ-doping plane is carried from the bottom to the top of the dot layer. This result indicates that the main reason for the asymmetric photoresponse is the existence of a built-in electric field due to the placing dopants in the barriers. Devices with a lower doping density (pB=4×1011 cm−2) or with a shorter distance between the doping layer and QDs (d = 2 nm) are found to operate better in a photoconductive mode with the highest peak detectivity of about 6×1010 cm Hz1/2/W at T = 90 K and 0.2 V bias. The best performance is achieved for the device with pB=12×1011 cm−2 and d = 5 nm in a photovoltaic regime. At a sample temperature of 90 K and no applied bias, a responsivity of 0.83 mA/W and detectivity of 8×1010 cm Hz1/2/W at λ=3.4 μm were measured under normal incidence infrared radiation.

Optical study of Ge quantum dots and infrared photodetectors

Si-based Ge Quantum Dot Infrared Photodetectors

Study Of Self-Assembled Ge Quantum Dot Infrared Photodetectors

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Ge Quantum Dot Infrared Photo-Detector

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Optical And Structural Investigation Of Stacked Ge Quantum Dots

Si-Based Ge Quantum Dot Infrared Photodetectors with Si_3N_4 as Anti-Reflection Coating

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

Optical properties of Ge/Si quantum dot superlattices

Optical Characterization of Ge Quantum Dots Grown on Porous Silicon by UHV/CVD

Plasmon polariton enhanced mid-infrared photodetectors based on Ge quantum dots in Si

Photocurrent Study of Ge/Si Double Quantum Dots

Vertical field enhanced nanostructure for quantum well infrared photodetector through Germanium subwavelength arrays

Influence of delta-doping on the performance of Ge/Si quantum-dot mid-infrared photodetectors

Germanium Quantum Dot Infrared Photodetectors Addressed by Self-Aligned Silicon Nanowire Electrodes.

Electrical and dielectric characterization of Ge quantum dots embedded in MIS structure (AuPd/SiO 2 :Ge QDs/n-Si) grown by MBE

Systematic Studies of the Photoluminescence of Ge Quantum Dots Grown on Strained Si(0.7)Ge(0.3) Buffer Layer

Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect transistors

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform