Abstract:Through a series of processes involving active oxidation, hydrofluoric etching, and hydrosilylation, Si QDs exhibit a photoluminescence quantum yield (PL QY) of 60.3%. Additionally, Si QDs with the highest PL QY are chosen as the material for the emitting layer in light‐emitting diode (LED) devices, which show electroluminescence with an external quantum efficiency (EQE) of 13.2%. Tunable emission wavelength and excellent biocompatibility have positioned silicon quantum dots (Si QDs) as important optoelectronic materials in areas like displays, lighting, and biomedical imaging. However, the challenges of low luminescence efficiency impede the utilization of Si QDs, restraining the advancement of Si QDs‐based light‐emitting diode (LED) devices. This study primarily concentrates on optimizing the surface structure of Si QDs and refining the Si QDs‐based LED device structures. A strategy involving active oxidation followed by hydrofluoric etching and hydrosilylation is proposed to enhance the optical characteristics of Si QDs. A variety of characterization methods are employed to evaluate the impact of the active oxidation on the photoluminescence and surface structures of Si QDs. This approach ultimately achieves an impressive enhancement in the photoluminescence quantum yield (PL QY) of Si QDs from 6.7% to 60.3%. Furthermore, the atmospherically oxidized Si QDs with the highest PL QY are selected as the emitting‐layer material to fabricate LEDs with the structure of ITO/PEDOT:PSS/TFB/Si QDs/ZnMgO/Ag. The introduction of ZnMgO effectively balances charge injection in the Si‐QDs‐based LEDs. As a result, the devices achieve electroluminescence with an external quantum efficiency of 13.2%.

Optimization of electro-luminescence performance of silicon quantum dots based light-emitting-diode

Silicon-quantum-dot Light-Emitting Diodes with Varying Emission Layer Thickness

Efficient silicon quantum dots light emitting diodes with an inverted device structure

Light-emitting Diodes Based on Colloidal Silicon Quantum Dots

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped TiO2 Films Annealed at Different Temperatures

Silicon-Quantum-Dot Light-Emitting Diodes with Interlayer-Enhanced Hole Transport

Long Time Atmospheric Oxidation Followed by Hydrofluoric Etching and Hydrosilylation for High‐Efficiency Light‐Emitting Silicon Quantum Dots

Light-Emitting Diodes Based on Colloidal Silicon Quantum Dots with Octyl and Phenylpropyl Ligands.

Photoluminescence from Silicon Nanocrystals in Encapsulating Materials

Evolution of Electroluminescence from Silicon Nitride Light-Emitting Devices Via Nanostructural Silver

Electroluminescence From Indium Tin Oxide Film/Nanoscale Si Oxide/P-Si Structure

Electroluminescence from Sno2/P(+)-Si Heterostructured Light-Emitting Device: Enhancing Its Intensity Via Capping A Tio2 Film

Optimization of the Electroluminescence from SiNx-based Light-Emitting Devices by Modulating the Size and Morphology of Silver Nanostructures

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Optimum Quantum Yield of the Light Emission from 2 to 10 Nm Hydrosilylated Silicon Quantum Dots

White light-emitting quantum dot diodes and tuning of luminescence processes

Improved Electroluminescence from Silicon Nitride Light Emitting Devices by Localized Surface Plasmons

Electroluminescence from Light-Emitting Devices Based on Erbium-Doped ZnO/n-Si Heterostructures: Enhancement Effect of Fluorine Co-Doping

Light-Emitting Devices Based on Erbium-Doped Tio2/P(+)-Si Heterostructures: Engineering of Electroluminescence Via Aluminum Co-Doping

Qd-Led Devices Using Znsno As an Electron-Transporting Layer