Abstract:The CdSe/ZnS quantum dots (QDs) have drawn the attention of the researchers due to their superior photophysical properties and their applications in QD-based light-emitting diodes (QLEDs). The conventional CdSe/ZnS-based QLED uses a highly conductive electron-transport layer, low-mobility hole-transporting layers (HTLs), and a vacuum-deposited opaque metal electrode at the top. This structure renders unbalanced charge injection into the emissive layer and also allows the device to emit light only at the bottom side, which affects the device output luminance and stability. Moreover, in the vacuum-deposition technique, the fabrication process is more complex, expensive, and time-consuming. To address all these issues, we fabricated an all-solution processable double-sided emitting QLED by a nonvacuum technique using high mobility multi-HTLs with a cascade structure, an insulating layer, and a transparent silver nanowire (AgNW) electrode for balanced charge injection for obtaining higher luminance at the top-side AgNW electrode. The as-fabricated QLED exhibited a very low turn-on voltage and high luminance of 2.2 V and 41,010 cd m–2, respectively. The QLED has also shown a high current efficiency of 15.2 cd A–1, a luminous efficiency of 16.2 lm W–1, and an external quantum efficiency of 8.2% at the top-side. These results indicate that the double-sided emitting QLED device opens up a pathway for designing next-generation lighting and display devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.0c00332?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.0c00332</a>.Stability characteristics of the three QLED devices and absorption spectra of the ITO, ITO/AgNW, and ITO/PEDOT:PSS/TFB/CBP samples (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.0c00332/suppl_file/el0c00332_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Fabrication of Centimeter-Scale Light-Emitting Diode with Improved Performance Based on Graphene Quantum Dots

Gram-scale Synthesis of Single-Crystalline Graphene Quantum Dots with Superior Optical Properties

Scalable synthesis of organic-soluble carbon quantum dots: superior optical properties in solvents, solids, and LEDs.

Fully Transparent Quantum Dot Light-Emitting Diode with a Laminated Top Graphene Anode

The Interaction Between Quantum Dots and Graphene: the Applications in Graphene‐Based Solar Cells and Photodetectors

Dipole–dipole-interaction-assisted Self-Assembly of Quantum Dots for Highly Efficient Light-Emitting Diodes

Facile Way to Fabricate High Quality White LED with Yellow Graphene Quantum Dots

A Facile Microwave-Assisted Hydrothermal Synthesis of Graphene Quantum Dots for Organic Solar Cell Efficiency Improvement

Efficient silicon quantum dots light emitting diodes with an inverted device structure

Device Physics and Device Chemistry of Quantum-Dot Light-Emitting Diodes

High-Performance, High-Resolution Quantum Dot Light-Emitting Diodes with Self-Assembly Single-Molecular Interface Modification

An Electrochemical Avenue to Green‐Luminescent Graphene Quantum Dots As Potential Electron‐Acceptors for Photovoltaics

Improved Performance of Quantum Dot Light-Emitting Diodes by Hybrid Electron Transport Layer Comprised of ZnO Nanoparticles Doped Organic Small Molecule

Solution-processed, High-Performance Light-Emitting Diodes Based on Quantum Dots

Synthesis Of White-Light-Emitting Graphene Quantum Dots Via A One-Step Reduction And Their Interfacial Characteristics-Dependent Luminescence Properties

Engineering Architecture of Quantum Dot-Based Light-Emitting Diode for High Device Performance with Double-Sided Emission Fabricated by Nonvacuum Technique

Top-Down Fabrication of Luminescent Graphene Quantum Dots Using Self-Assembled Au Nanoparticles

Tailoring Nanostructures of Quantum Dots toward Efficient and Stable All-Solution Processed Quantum Dot Light-Emitting Diodes

High-Performance, Solution-Processed, and Insulating-Layer-Free Light-Emitting Diodes Based on Colloidal Quantum Dots.

23% power conversion efficiency light-emitting diodes using monolayer quantum dots

High-performance, high-resolution quantum dot light-emitting devices through photolithographic patterning