Electronic Structural Insight into High‐Performance Quantum Dot Light‐Emitting Diodes
Yang Cheng,Zhixiang Gui,Ruixi Qiao,Shucheng Fang,Guohang Ba,Tianyu Liang,Haoyue Wan,Zhihong Zhang,Can Liu,Chaojie Ma,Hao Hong,Fengjia Fan,Kaihui Liu,Huaibin Shen
DOI: https://doi.org/10.1002/adfm.202207974
IF: 19
2022-09-23
Advanced Functional Materials
Abstract:Crystalline structure‐dependent electronic properties have been understood thoroughly in quantum dot light‐emitting diodes in this work. QD‐LEDs can simultaneously exhibit high external quantum efficiency, roll‐off‐free under high brightness, and dramatically improved operation stability by crystal phase engineering. Quantum dot light‐emitting diodes (QD‐LEDs) are highly promising light sources with excellent figures of merit. Although great successes have been achieved in elevating some key parameters to an ideal level, QD‐LEDs with superior performance in all aspects have rarely been realized. Herein, by exploring crystalline structure‐dependent electronic properties, it is shown that QD‐LEDs can simultaneously exhibit high external quantum efficiency, roll‐off‐free under high brightness, and dramatically improved operational stability. This improved performance stems from the crystal phase engineering of QD. Reduced structure symmetry in the wurtzite phase introduces an unneglectable internal crystal field compared with the zinc‐blende one, which raises both the conduction and valence band energy levels, thus, facilitating a more balanced charge injection. The crystal phase‐optimized superior‐comprehensive performance in the QD‐LED offers a novel degree of freedom for device engineering and promotes commercial applications for the upcoming display and illumination technologies.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology