Abstract:The class of organic–inorganic lead halides with perovskite crystal structures has recently emerged as promising materials for a variety of practical optoelectronic applications. In particular, hybrid halide perovskite quantum dots possess excellent intrinsic optoelectronic properties such as high color purity (full width at half-maximum of 24.59 nm) and photoluminescence quantum yields (92.7%). In this work, we demonstrate the use of perovskite quantum dot materials as an emissive layer of hybrid light-emitting transistors. To investigate the working mechanism of perovskite quantum dots in light-emitting transistors, we investigated the electrical and optical characteristics under both p-channel and n-channel operation. Using these materials, we have achieved perovskite quantum dot light-emitting transistors with high electron mobilities of up to 12.06 cm2·V–1 s–1, high brightness of up to 1.41 × 104 cd m–2, and enhanced external quantum efficiencies of up to 1.79% operating at a source–drain potential of 40 V.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c05537?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c05537</a>.Atomic force microscopy, LET output characteristics, electrical and optical characteristics of SY control LETs, perovskite QD LETs under p-channel operation, comparison of QD and SY emission characteristics, and schematic diagram of LET characterization system (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c05537/suppl_file/am0c05537_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Light emitting single electron transistors

Green Yellow Light-Emitting-Diodes from Isoelectronically Doped Znse Quantum-Well Structures

Light Emitting Transistors Using Silicon Quantum Dots in an Organic Matrix

Solution-Processed Quantum-Dots Light-Emitting Transistors with Equivalent Efficiency of Light-Emitting Diodes

An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

White light-emitting quantum dot diodes and tuning of luminescence processes

High Efficiency Light-Emitting Transistor with Vertical Metal-Oxide Heterostructure

High-Performance, Solution-Processed Quantum Dot Light-Emitting Field-Effect Transistors with a Scandium-Incorporated Indium Oxide Semiconductor.

Heterostructure from PbS Quantum Dot and Carbon Nanotube Inks for High‐Efficiency Near‐Infrared Light‐Emitting Field‐Effect Transistors

Qd-Led Devices Using Znsno As an Electron-Transporting Layer

Electroluminescent Characteristics of CdSe Colloidal Quantum Dots

Light-emitting field-effect transistors with EQE over 20% enabled by a dielectric-quantum dots-dielectric sandwich structure

Saturated and Multi‐Colored Electroluminescence from Quantum Dots Based Light Emitting Electrochemical Cells

Transient Leakage Electroluminescence of Quantum-Dot Light-Emitting Diodes

Towards single electron transistor-based photon detection with microplasma-enabled graphene quantum dots

Tracing the electron transport behavior in quantum-dot light-emitting diodes via single photon counting technique

Silicon-quantum-dot Light-Emitting Diodes with Varying Emission Layer Thickness

Light-emitting Diodes Based on Colloidal Silicon Quantum Dots

Recent Developments and Novel Applications of Thin Film, Light‐Emitting Transistors

Light-Emitting Transistors with High Color Purity Using Perovskite Quantum Dot Emitters

Strong high-energy exciton electroluminescence from the light holes of polytypic quantum dots