Abstract:The contributions of Auger recombination, electric field‐induced quenching, and electron leakage to the efficiency roll‐off of QLEDs are quantified using electrically pumped transient absorption spectroscopy. The bleach signal, Stark effect signal, and leakage signal are used to calculate each of these factors, respectively. Electron leakage is proved to be the primary factor of EQE roll‐off. The application of quantum‐dot light‐emitting diodes (QLEDs) is hindered by efficiency roll‐off at high current densities. Factors contributing to this roll‐off include Auger recombination, electric field‐induced quenching, Joule heating, and electron leakage into the hole transport layer. However, a method to quantitatively attribute the contribution of each factor to roll‐off has not yet been available, leaving the primary cause of roll‐off unidentified. This work addresses this gap using electrically pumped transient absorption spectroscopy, which measures the accumulated electrons and electric field in quantum dots (QDs). This study also introduces a method to quantify electron leakage in QLEDs using this spectroscopic technique. Based on the spectroscopic experimental results, the contribution of each factor to roll‐off is quantified. A green QLED with a peak external quantum efficiency (EQE) of 26.8% is studied as an example. The EQE declines to 20.5% at a current density of 354 mA cm−2, where field‐induced quenching accounts for 5% of the efficiency roll‐off, and electron leakage contributes 95%. Contributions from Auger recombination and heat‐induced quenching are negligible. This work demonstrates strong correlations between roll‐off and electron leakage amplitude using statistical data obtained in multiple QLEDs, confirming that electron leakage is the primary factor in EQE roll‐off.

Transient Leakage Electroluminescence of Quantum-Dot Light-Emitting Diodes

Quantifying Efficiency Roll‐Off Factors in Quantum‐Dot Light‐Emitting Diodes

An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

Deciphering the Causes of the Rapid Electroluminescence Loss in Blue Quantum Dot Light‐Emitting Devices

High-performance green and blue quantum-dot light-emitting diodes with eliminated charge leakage

Probing the Operation of Quantum-Dot Light-Emitting Diodes Using Electrically Pumped Transient Absorption Spectroscopy

Anomalous Efficiency Elevation of Quantum-Dot Light-Emitting Diodes Induced by Operational Degradation.

Study of pristine and degraded blue quantum dot light-emitting diodes by transient electroluminescence measurements

Tracing the electron transport behavior in quantum-dot light-emitting diodes via single photon counting technique

Design of the Hole-Injection/Hole-Transport Interfaces for Stable Quantum-Dot Light-Emitting Diodes

Device Physics and Device Chemistry of Quantum-Dot Light-Emitting Diodes

Origin of the Efficiency Roll-off in Quantum Dot Light-Emitting Diodes: An Electrically Excited Transient Absorption Spectroscopy Study

Solution-processed green and blue quantum-dot light-emitting diodes with eliminated charge leakage

Elucidating the Impact of Electron Accumulation in Quantum-Dot Light-Emitting Diodes

High Brightness Electroluminescence of Non‐Carrier‐Injection QLEDs with Precise Layer Processing by Spontaneous Spreading Method

Reverse Leakage Current Characteristics of GaN/InGaN Multiple Quantum-Wells Blue and Green Light-Emitting Diodes

A Transient-Electroluminescence Study on Perovskite Light-Emitting Diodes

Differences in Electron and Hole Injection and Auger Recombination between Red, Green, and Blue CdSe-Based Quantum Dot Light Emitting Devices

Ultrabright and stable top-emitting quantum-dot light-emitting diodes with negligible angular color shift

Efficient Green InP-based QD-LED by Controlling Electron Injection and Leakage

Electrochemically-Stable Ligands Bridge The Photoluminescence-Electroluminescence Gap Of Quantum Dots