Abstract:The implementation of a quantum computer requires a qubit-specific measurement capability to read-out the final state of a quantum system. The model of spin dependent tunneling followed by charge readout has been highly successful in enabling spin qubit experiments in all-electrical, semiconductor based quantum computing. As experiments grow more sophisticated, and head towards multiple qubit architectures that enable small scale computation, it becomes important to consider the charge read-out overhead. With this in mind, Reilly et al. demonstrated a gate readout scheme in a GaAs double quantum dot that removed the need for an external charge sensor. This readout, which achieved sensitivities of order me/$\sqrt(Hz)$, was enabled by using a resonant circuit to probe the complex radio-frequency polarisability of the double quantum dot. However, the ultimate performance of this technology and the noise sources that limit it remain to be determined. Here, we investigate a gate-based readout scheme using a radio-frequency resonant circuit strongly coupled to a double quantum at the corner states of a silicon nanowire transistor. We find a significantly improved charge sensitivity of 37 $\mu$e/$\sqrt(Hz)$. By solving the dynamical master equation of the fast-driven electronic transitions we quantify the noise spectral density and determine the ultimate charge and phase sensitivity of gate-based read-out. We find comparable performance to conventional charge sensors and fundamental limits of order ne/$\sqrt(Hz)$ and $\mu$rad/$\sqrt(Hz)$, with the gate-based sensor improving on standard detection for certain device parameters. Our results show that, especially in state-of-the-art silicon qubit architectures, charge detection by probing the complex polarisability has advantages in terms of reducing the readout overhead but also in terms of the absolute charge sensitivity.

Si/SiGe quantum dot with superconducting single-electron transistor charge sensor

Charge Sensing in Intrinsic Silicon Quantum Dots

Double quantum dot with integrated charge sensor based on Ge/Si heterostructure nanowires

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

A Graphene Quantum Dot with A Single Electron Transistor As an Integrated Charge Sensor

Fast charge sensing of Si/SiGe quantum dots via a high-frequency accumulation gate

Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing

Resonant tunneling in a colloidal CdS semiconductor quantum-dot single-electron transistor based on heteroepitaxial-spherical Au/Pt nanogap electrodes

Dispersive readout of a silicon quantum device using an atomic force microscope-based rf gate sensor

Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing

Single-Gate Accumulation-Mode InGaAs Quantum Dot with a Vertically Integrated Charge Sensor

Fabrication of quantum dots in undoped Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using a single metal-gate layer

Charge-sensing of a Ge/Si core/shell nanowire double quantum dot using a high-impedance superconducting resonator

Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots

Quantum Dot With a Diamond-Shaped Channel MOSFET on a Bulk Si Substrate

Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor

A high-sensitivity gate-based charge sensor in silicon

Coulomb Blockade Oscillations in Silicon Single-electron Transistor with a Strong Gate-dot Coupling

Charge detection of a quantum dot under different tunneling barrier symmetries and bias voltages

Elongated quantum dot as a distributed charge sensor

Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots