Abstract:In this paper, the novel Quasi-SOI CMOS architecture is fabricated based on bulk Si substrate for the first time. The whole fabrication is basically compatible with the conventional CMOS technology. The path of the draininduced barrier lowering (DIBL) effect can be effectively suppressed by the "L-Type" insulator surrounding the source and drain in Quasi-SOI MOSFET. Such device structure can effectively suppress the short-channel effects (SCEs) and prevent the transistor from the bulk punch-through. The leakage current will not increase with the high doping concentration of the substrate due to the absence of P/N junctions surrounding the S/D regions which brings more flexibility on the modulation of the threshold voltage. Moreover, the influence of process-induced variations on the new transistor performance and implications for manufacturing processes comparing with UTB SOI MOSFET are also studied by simulations in order to investigate the sensitivity of the important characteristics to the device crucial physical parameter fluctuations introduced by the process. The results show that Quasi-SOI MOSFET can be more tolerant of process-induced variation for the deep nanometer scale regime. The highly manufacturable Quasi-SOI MOSFET which can combine the advantages of ultra-thin body (UTB) SOI MOSFET and bulk silicon device can be considered as a promising candidate for highly scaled devices.

n channel SOI Schottky barrier tunneling transistors

Monte Carlo Simulation Of 50nm N-Channel Schottky Barrier Tunneling Transistors

Simulation for a Novel Vertical SOI Configuration

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

SOI Schottky Barrier Tunnelling Transistors Fabricated with Spacer Technology

Fabrication of the sub-100 nm thin body SOI Schottky barrier tunneling transistors with sidewall etchback technology

Study of n-Type Schottky Barrier Tunneling Transistor Characterizations

Fabrication and Characteristics of Soi-Based Single-Electron Transistor with In-Plane Side Gates

Experimental investigation of Quasi-SOI MOSFET for highly scaled devices

Characterizations of double-gate SBTT studying by a 2-D full-band Monte Carlo device simulator

A planar asymmetric Schottky barrier source/drain structure for nano-scale MOSFETs

Quasi-two-dimensional Subthreshold Current Model of Deep Submicrometer SOI Drive-in Gate Controlled Hybrid Transistors with Lateral Non-Uniform Doping Profile.

Comprehensive Understanding of Schottky Barrier Tunneling FET Built Upon Ultrathin Silicon Nanowire for Monolithic 3D Integration

Quasi-Soi Mosfet: A Novel Architecture Combining the Advantages of Soi and Bulk Devices

Monte Carlo simulation of Schottky contact with direct tunnelling model

Role of Si Implantation in Control of Underlap Length in Schottky-barrier Source/drain MOSFETs on Ultrathin Body SOI

Comprehensive analysis of short-channel effects in ultrathin SOI MOSFETs

Comparative Study of Tunnel Field Effect Transistors with Dopant-Segregated Schottky Source/Drain

Monte Carlo Simulation of P- and N-Channel GOI MOSFETs by Solving the Quantum Boltzmann Equation

T-Shaped Body Silicon-on-Insulator (SOI) MOSFET

Monte Carlo Simulation of Band-to-band Tunneling in Silicon Devices