Abstract:In this paper, we have presented a practical direct tunnelling model, which can be applied in the Monte Carlo simulation of the Schottky contact. In this model, the thermionic emission and the tunnelling effect of the Schottky barrier are included. In order to verify the validity of this model, we have implemented it in the Monte Carlo simulator to simulate the characteristics of the Schottky barrier diode. An agreement has been obtained between the simulation results and the measurements. Besides, we apply this model to study the performance of the n-channel Schottky barrier MOSFET (SB-MOSFET), in which the doped source/drain of the conventional MOSFET is replaced by metal silicide. We find that the low barrier at the source will induce high drive current in the on state, and at the same time reduce the on/off ratio. In addition, decreasing the metal silicide source/drain contact areas will improve the performance of the SB-MOSFET. By using this model, the simulation of the n-channel SB-MOSFET will be helpful in designing the parameters of these kinds of devices.

Characterizations of double-gate SBTT studying by a 2-D full-band Monte Carlo device simulator

Study of n-Type Schottky Barrier Tunneling Transistor Characterizations

Monte Carlo Simulation Of 50nm N-Channel Schottky Barrier Tunneling Transistors

A Self-Consistent Simulation of Insb Double-Gate Mosfets Using Full-Band Tight-Binding Approach

Monte Carlo simulation of Schottky contact with direct tunnelling model

n channel SOI Schottky barrier tunneling transistors

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

An Assessment of the Performance for Double Gate Schottky Barrier MOSFETs with Modulated Back Gate

Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

Characterization Of Dopant Segregated Schottky Barrier Source/Drain Contacts

A Monte Carlo Study of Ambipolar Schottky Barrier MOSFETs

An Analytical 2D Current Model of Double-Gate Schottky-Barrier MOSFETs

Monte Carlo Simulation of Band-to-band Tunneling in Silicon Devices

A compact model for double-gate tunneling field-effect-transistors and its implications on circuit behaviors

Non-stationary transports in sub-100nm UTB mosfet by using QBE based Monte Carlo method

Comparative Study of Tunnel Field Effect Transistors with Dopant-Segregated Schottky Source/Drain

A Comparative Study of Double Gate MOSFET with Asymmetric Barrier Heights at Source/drain and the Symmetric DG-SBFET

Simulation of Nano-Scale Double Gate In0.53Ga0.47As Nmosfets by a Deterministic BTE Solver

Impact of Gate Overlap on Performance of Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors Including Gate Induced Barrier Lowering Effect

Investigating scattering effects in nano-scale double gate MOSFETs by using direct solution of the Boltzmann transport equation and Poisson-Schrodinger equation method

A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor