Abstract:We propose a deterministic solver for the time-dependent multi-subband Boltzmann transport equation (MSBTE) for the two dimensional (2D) electron gas in double gate metal oxide semiconductor field effect transistors (MOSFETs) with flared out source/drain contacts. A realistic model with six-valleys of the conduction band of silicon and both infra-valley and inter-valley phonon-electron scattering is solved. We propose a second order finite volume method based on the positive and flux conservative (PFC) method to discretize the Boltzmann transport equations (BTEs). The transport part of the BTEs is split into two problems. One is a 1D transport problem in the position space, and the other is a 2D transport problem in the wavevector space. In order to reduce the splitting error, the 2D transport problem in the wavevector space is solved directly by using the PFC method instead of splitting into two 1D problems. The solver is applied to a nanoscale double gate MOSFET and the current-voltage characteristic is investigated. Comparison of the numerical results with ballistic solutions show that the scattering influence is not ignorable even when the size of a nanoscale semiconductor device goes to the scale of the electron mean free path.

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Multi subband deterministic simulation of an ultra-thin double gate MOSFET with 2D electron gas

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Performance comparison of Si, III–V double-gate n-type MOSFETs by deterministic Boltzmann transport equation solver

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Investigating scattering effects in nano-scale double gate MOSFETs by using direct solution of the Boltzmann transport equation and Poisson-Schrodinger equation method

A finite volume method for the multi subband Boltzmann equation with realistic 2D scattering in double gate MOSFETs

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A Self-Consistent Simulation of Insb Double-Gate Mosfets Using Full-Band Tight-Binding Approach

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Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

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Investigation of Gate Current in Nano-Scale Mosfets by Monte Carlo Solution of Quantum Boltzmann Equation

A Deterministic Method Study of the Impact of the Pauli Principle in Double-Gate MOSFETs

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

Tcad Simulations Of Nano-Scale Functional Neuron Mosfets With Splitted Gate Bias On Floating Gate

Characterizations of double-gate SBTT studying by a 2-D full-band Monte Carlo device simulator