Abstract:The synergistic effects between total ionizing dose (TID) and transient dose rate (TDR) effects are explored. To implement the analysis, a stable 3D parallel numerical scheme is specially developed. Using the control volume finite element tearing and interconnect (CV-FETI) method, the discontinuous boundary conditions can be included with the usual numerical properties. Newton's method is employed to overcome the nonconvergence brought by the nonlinear property of the drift- diffusion model. Compared to with the commercial COMSOL Multiphysics software, our CV-FETIM shows strong numerical stability on unstructured meshes. The proposed method is validated by comparing the numerical results with those calculated using commercial software. Then, this new solver is applied to simulate MOSFET, STI-based LDMOSFET, and FinFET. By adjusting the dose rate, oxide traps, and interface traps, the independent TID, independent TDR, and TID-TDR synergistic effects are investigated. On picosecond or nanosecond timescales, the duration, amplitude, and decline rate of the radiation-induced photocurrent are studied. Moreover, the influence of interface traps on different surfaces is compared. The numerical results indicated that the developed numerical scheme possesses good stability, accuracy, and applicability.

Transient Simulation of Nano-Scale UTBB Nmosfets by Deterministically Solving BTE

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Synergistic Effects Simulation of MOSFET by Control Volume Finite Element Method

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Evaluation Of Quasi-Ballistic Transport In Nano-Mosfets By Deterministic Solver Of The Time Dependent Multi-Subbands Boltzmann Transport Equation

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Multi subband deterministic simulation of an ultra-thin double gate MOSFET with 2D electron gas

Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

Investigations of Nbti by Conventional and New Measurement Methods for P-Mosfets

Investigating the effect of non-stationary transports in UTB MOSFETs with elevated and recessed source/drain by using full band Monte Carlo simulation method

Simulation of Si and Ge UTB MOSFETs using Monte Carlo method based on the quantum Boltzmann equation

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Trap Dynamics Based 3D Kinetic Monte Carlo Simulation for Reliability Evaluation of UTBB MOSFETs

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Investigating scattering effects in nano-scale double gate MOSFETs by using direct solution of the Boltzmann transport equation and Poisson-Schrodinger equation method

Simulation Of Time-Dependent Transport In Nanoscaled Devices

A Coupled 3D Finite Element-Circuit Model for the Numerical Analysis of Small Time Scale Transients of an Insulated Gate Bipolar Transistor Power Electronics Device