Abstract:The ability of Ultra-Thin-Body (UTB) MOS devices to enable channel length scaling can only be realistically assessed by accurately taking key physical effects such as Quantum Confinement effects (QCEs) and Short channel effects (SCEs) into account. QCEs can accurately be considered only through a full band structure-based approach, which tends to be computationally inefficient, particularly at higher channel thicknesses, and is further exacerbated when required to be used to calculate 2-D channel electrostatics. Therefore, in this work, we propose a methodology to efficiently simulate the channel electrostatics of a UTB Double Gate MOSFET by solving the 1-D band structure with the 2-D Poisson's equation self consistently, determined by using the semi-empirical tight-binding approach only over those k-points that are likely to have a significant effect on the electrostatics. By showing that determining the 1-D Band structure at the source-channel junction is adequate to accurately determine the 2-D channel electrostatics, we show that this approach remains computationally tractable even at higher channel lengths. By following this approach, we obtain the 2-D profile of important device parameters such as electron density and channel potential, which, in turn, enables the determination of the thermionic current density and source-to-drain tunneling current density for a wide range of device parameters using Tsu-Esaki and WKB formalism respectively. Furthermore, the effect of phonon scattering, which is likely to manifest at longer channel lengths, is also incorporated in the drain current calculation, thus making this approach widely applicable.

Investigating the effect of non-stationary transports in UTB MOSFETs with elevated and recessed source/drain by using full band Monte Carlo simulation method

Non-stationary transports in sub-100nm UTB mosfet by using QBE based Monte Carlo method

Monte Carlo Simulation Of Hole Non-Stationary Transports In Utb Soi Rpmosfet

Synergistic Effects Simulation of MOSFET by Control Volume Finite Element Method

Impact of gate overlap on electron transport in UTB nMOSFET

Investigations of Nbti by Conventional and New Measurement Methods for P-Mosfets

Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

Transient Simulation of Nano-Scale UTBB Nmosfets by Deterministically Solving BTE

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Scalability and Parasitic Effect of Utb Soi Mosfets with Raised S/D and Sunk S/D

Simulation of Si and Ge UTB MOSFETs using Monte Carlo method based on the quantum Boltzmann equation

On the Effect of Scattering in Schottky Barrier MOSFETs

Nonparabolicity Effects of The Ultra-thin Body Double-gate MOSFETs

Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study

Evaluation Of Quasi-Ballistic Transport In Nano-Mosfets By Deterministic Solver Of The Time Dependent Multi-Subbands Boltzmann Transport Equation

Characteristic Variations Induced by Random Fluctuation of Source/Drain Lateral Distribution Dopant in Nano-Scale UTB SOI MOSFET

Computationally Efficient Band Structure-Based Approach for Accurately Determining Electrostatics and Source-to-Drain Tunneling Current in UTB MOSFETs

Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET

Investigation of Gate Current in Nano-Scale Mosfets by Monte Carlo Solution of Quantum Boltzmann Equation

Investigation the Impact of Composition on the Performance of SiGe Nanowire Pmosfets by Different Simulation Methods

A Monte Carlo Study of Ambipolar Schottky Barrier MOSFETs