Abstract:In this work, quantum ballistic transport study of a Si double-gate pMOSFET has been carried out in an ultra-thin structure. The simulation is performed by using non-equilibrium Green's function (NEGF) solver that incorporates six band k . p model. Based on this framework, we analyze the device characteristics for a channel length of 5 nm considering different transport directions, confinement directions and channel thickness. In the on and off state of the device several physical parameters are necessary for performance analysis including threshold voltage, subthreshold slope, on/off current ratio. Our results confirm that for 5nm gate length, best electrical performance is obtained at (001)/[100] crystal orientation. It is observed that better ON current, subthreshold swing and lower value of tunneling ratio can be achieved by optimizing the channel thicknesses and selecting the proper crystallographic orientation for the device. The I-ON/I-OFF ratio is also calculated for both high performance and low operating power applications. We find that large channel thickness leads to worse sub-threshold slope due to the stronger source-to-drain tunneling caused by electrostatics degradation. The potential barrier and spectral current density are also presented in order to find the source-to-drain tunneling and ratio for different crystal orientations and body thickness.

Multi subband deterministic simulation of an ultra-thin double gate MOSFET with 2D electron gas

A finite volume method for the multi subband Boltzmann equation with realistic 2D scattering in double gate MOSFETs

Evaluation Of Quasi-Ballistic Transport In Nano-Mosfets By Deterministic Solver Of The Time Dependent Multi-Subbands Boltzmann Transport Equation

Influence of Channel Length, Thickness, and Crystal Orientation in Ultra-Scaled Double-Gate Pmosfets

Performance Analysis of Ultra-thin-Body, Double-Gate pMOSFETs at 5 nm Technology Node

Simulation of Nano-Scale Double Gate In0.53Ga0.47As Nmosfets by a Deterministic BTE Solver

Simulation Study of Quasi-Ballistic Transport in Asymmetric DG-MOSFET by Directly Solving Boltzmann Transport Equation

A Self-Consistent Simulation of Insb Double-Gate Mosfets Using Full-Band Tight-Binding Approach

Investigating scattering effects in nano-scale double gate MOSFETs by using direct solution of the Boltzmann transport equation and Poisson-Schrodinger equation method

Quantum Boltzmann Equation Solved by Monte Carlo Method for Nano-Scale Semiconductor Devices Simulation

Investigation of Gate Current in Nano-Scale Mosfets by Monte Carlo Solution of Quantum Boltzmann Equation

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

A Deterministic Method Study of the Impact of the Pauli Principle in Double-Gate MOSFETs

Simulation of Si and Ge UTB MOSFETs using Monte Carlo method based on the quantum Boltzmann equation

Non-stationary transports in sub-100nm UTB mosfet by using QBE based Monte Carlo method

Transient Simulation of Nano-Scale UTBB Nmosfets by Deterministically Solving BTE

Numerical simulation of an energy-transport model for partially quantized particles

Evaluation of scattering in asymmetric quasi-ballistic DG-MOSFET

Self-consistent Simulation of Schottky Barrier SpinFET

Hydrodynamic Simulation of Sub 50nm Double Gate MOSFET