Abstract:Unprecedented control over the manufacture of electronic devices on nanometer scale has allowed to perform highly controllable and fine-tuned experiments in the quantum regime where exotic effects can nowadays be measured. In quantum dot devices, enhanced conductance below a characteristic energy scale is the signature of Kondo singlet formation. Precise predictions of quantum transport properties in similar nanoelectronics devices are desired to design optimal functionality and control. Standard transport methods suffer from limitations in nanostructure specifics, set-up design, temperature and voltage regime of applicability. To overcome these issues, such that we obtain modelling flexibility and accurate conductance predictions, in this thesis we analytically derive alternative and improved quantum transport formulations having as their starting point scattering theory in the Landauer-Büttiker formula, linear response theory in the Kubo formula, nonequilibrium Keldysh theory in the Meir-Wingreen formula and Fermi liquid theory in the Oguri formula. We perform a systematic benchmark of our exact expressions, comparing with the standard approaches using numerical renormalization group techniques. The new formulations not only reproduce literature results, but also show higher accuracy and computational efficiency, as well as a wider applicability under regimes and conditions out of reach by existing methods. We also derive generalized effective models for multi-orbital two-lead interacting nanostructures in both Coulomb blockade and mixed-valence regime, which yield reusable conductance predictions directly in terms of the effective model parameters. We conclude by applying our novel formulations to complex nanoelectronics systems, including a single-molecule benzene transistor, a charge-Kondo quantum dot made from graphene and semiconductor triple quantum dot.

Numerical simulation of an energy-transport model for partially quantized particles

Quantum Mechanical Carrier Transport and Nano-scale MOS Modeling

Monte Carle Simulation of Quantum Transport Through Nanostructures

A Unified Carrier-Transport Model for the Nanoscale Surrounding-Gate MOSFET Comprising Quantum–Mechanical Effects

Quantum Boltzmann Equation Solved by Monte Carlo Method for Nano-Scale Semiconductor Devices Simulation

Combined Semiclassical And Effective-Mass Schrodinger Approach For Multiscale Analysis Of Semiconductor Nanostructures

Numerical Green's Function Modeling of One-Dimensional Quantum Transport

Multi subband deterministic simulation of an ultra-thin double gate MOSFET with 2D electron gas

Numerical approximation of the viscous quantum hydrodynamic model for semiconductors

A finite element method for the quantum hydrodynamic model for semiconductor devices

Open System Approach to Non-Equilibrium Dynamical Theory of Quantum Dot Systems

Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor

Electron injection model for linear and parabolic 2D materials: Full quantum time-dependent simulation of graphene devices.

Numerical Electron Mobility Model of Nanoscale Symmetric, Asymmetric and Independent Double-Gate Mosfets

Simulating Semiconductor Charge Transport

Quantum transport in interacting nanodevices: from quantum dots to single-molecule transistors

A finite volume method for the multi subband Boltzmann equation with realistic 2D scattering in double gate MOSFETs

Nanoscale FinFET Simulation: A Quasi-3D Quantum Mechanical Model Using NEGF

Simulation Methodology for Electron Transfer in CMOS Quantum Dots

On hybrid quantum–classical transport models

Quantum modeling for nanoscale double gate MOSFETs based on Green's function