Abstract:Unprecedented control over the manufacture of electronic devices on nanometer scale has allowed to perform highly controllable and fine-tuned experiments in the quantum regime where exotic effects can nowadays be measured. In quantum dot devices, enhanced conductance below a characteristic energy scale is the signature of Kondo singlet formation. Precise predictions of quantum transport properties in similar nanoelectronics devices are desired to design optimal functionality and control. Standard transport methods suffer from limitations in nanostructure specifics, set-up design, temperature and voltage regime of applicability. To overcome these issues, such that we obtain modelling flexibility and accurate conductance predictions, in this thesis we analytically derive alternative and improved quantum transport formulations having as their starting point scattering theory in the Landauer-Büttiker formula, linear response theory in the Kubo formula, nonequilibrium Keldysh theory in the Meir-Wingreen formula and Fermi liquid theory in the Oguri formula. We perform a systematic benchmark of our exact expressions, comparing with the standard approaches using numerical renormalization group techniques. The new formulations not only reproduce literature results, but also show higher accuracy and computational efficiency, as well as a wider applicability under regimes and conditions out of reach by existing methods. We also derive generalized effective models for multi-orbital two-lead interacting nanostructures in both Coulomb blockade and mixed-valence regime, which yield reusable conductance predictions directly in terms of the effective model parameters. We conclude by applying our novel formulations to complex nanoelectronics systems, including a single-molecule benzene transistor, a charge-Kondo quantum dot made from graphene and semiconductor triple quantum dot.

Electron injection model for linear and parabolic 2D materials: Full quantum time-dependent simulation of graphene devices.

Intrinsic electron injection model for linear 2D materials: Full quantum Monte Carlo time-dependent simulation of graphene devices

Quantum Time-Dependent Monte Carlo Simulation of Electron Devices with 2D Linear-Band Materials: a Genuine TeraHertz Signature for Graphene

Time-dependent Quantum Monte Carlo Simulation of Electron Devices with Two-Dimensional Dirac Materials: A Genuine Terahertz Signature for Graphene

Modeling Klein Tunneling and Caustics of Electron Waves in Graphene

Efficient Linear-Scaling Quantum Transport Calculations on Graphics Processing Units and Applications on Electron Transport in Graphene

Large-scale tight-binding simulations of quantum transport in ballistic graphene

Monte Carlo modeling of spin injection through a Schottky barrier and spin transport in a semiconductor quantum well

Tilted Klein Tunneling Across Atomically Sharp Interfaces

Quantum transport simulation of exciton condensate transport physics in a double layer graphene system

Simulation of various nanoelectronic devices based on 2D materials

Simulation of electron transfer processes in a semiconductor structure using graphene and boron nitride

Quantum Mechanical Simulation of Electronic Transport in Nanostructured Devices by Efficient Self-consistent Pseudopotential Calculation

Nonlinear electron and spin transport in semiconductor superlattices

Simulations of Electron Transport Through Three-Dimensional Quantum Structures

Electron Transport from Quantum Kinetic Monte Carlo Simulations

Quantum transport in interacting nanodevices: from quantum dots to single-molecule transistors

Interband and intraband transitions, as well as charge mobility in driven two-band model with electron phonon coupling

Numerical Green's Function Modeling of One-Dimensional Quantum Transport

Electron Dynamics in Open Quantum Systems: The Driven Liouville-von Neumann Methodology within Time Dependent Density Functional Theory

Model Order Reduction for Quantum Transport Simulation of Band-To-Band Tunneling Devices