Hydrodynamic Simulation of Sub 50nm Double Gate MOSFET

刘弋波,刘恩峰,刘晓彦,韩汝琦

DOI: https://doi.org/10.3969/j.issn.1674-4926.2003.z1.033

2016-01-01

Abstract:The performance of sub 50nm double gate MOSFET with different channel-length is simulated by the hydrodynamic simulation software developed. The distribution of electron temperature and drift velocity is compared in the channel direction. The short channel effect is also analyzed.

What problem does this paper attempt to address?

Influence of Channel Length, Thickness, and Crystal Orientation in Ultra-Scaled Double-Gate Pmosfets

Shuo Zhang,Jun Z. Huang,Zhenguo Zhao,Wen-Yan Yin

DOI: https://doi.org/10.1109/edaps.2017.8277037

2017-01-01

Abstract:Ultra-scaled silicon double-gate pMOSFETs with different channel lengths and thicknesses, as well as confinement and transport crystal orientations are simulated by the non-equilibrium Green's function (NEGF) approach employing the six-band k·p Hamiltonian. The ballistic ON-state current (I on ) and the subthreshold swing (SS) are extracted from the I-V curves to evaluate the device performances. It is found that the optimal crystal orientation is dramatically different for different channel lengths and thicknesses. To understand such device behaviors, band structures, average ballistic hole velocities, and source-to-drain tunneling are calculated and compared.
Performance Analysis of Ultra-thin-Body, Double-Gate pMOSFETs at 5 nm Technology Node

Afshan Khaliq,Wen-Yan Yin

DOI: https://doi.org/10.1109/NEMO49486.2020.9343433

2020-01-01

Abstract:In this work, quantum ballistic transport study of a Si double-gate pMOSFET has been carried out in an ultra-thin structure. The simulation is performed by using non-equilibrium Green's function (NEGF) solver that incorporates six band k . p model. Based on this framework, we analyze the device characteristics for a channel length of 5 nm considering different transport directions, confinement directions and channel thickness. In the on and off state of the device several physical parameters are necessary for performance analysis including threshold voltage, subthreshold slope, on/off current ratio. Our results confirm that for 5nm gate length, best electrical performance is obtained at (001)/[100] crystal orientation. It is observed that better ON current, subthreshold swing and lower value of tunneling ratio can be achieved by optimizing the channel thicknesses and selecting the proper crystallographic orientation for the device. The I-ON/I-OFF ratio is also calculated for both high performance and low operating power applications. We find that large channel thickness leads to worse sub-threshold slope due to the stronger source-to-drain tunneling caused by electrostatics degradation. The potential barrier and spectral current density are also presented in order to find the source-to-drain tunneling and ratio for different crystal orientations and body thickness.
A comparative study on electrothermal characteristics of nanoscale multiple gate MOSFETs.

Qi-Lin Gu,Peng Zhang,Yi Ru,Hao Song,Wen-Sheng Zhao,Wen-Yan Yin

DOI: https://doi.org/10.1016/j.microrel.2017.09.003

IF: 1.6

2017-01-01

Microelectronics Reliability

Abstract:Multiple-gate (MG) MOSFETs are promising candidates for next-generation integrated circuits technology. This paper presents the electrothermal characterization of three-type nanoscale MG MOSFETs, i.e., Π-gate, quadruple-gate (QG), and Ω-gate MOSFETs. Meanwhile, the temperature distribution of a real Ω-gate MOSFET with gradual channel width is also studied. Finite difference method (FDM) is adopted to solve the 3-D time-dependent heat conduction equations. The simulation results of the steady-state temperature distribution are validated against the commercial software COMSOL. Moreover, the transient temperature response of MG MOSFETs to different waveforms are also captured and compared.
Device Simulation for Nanoscale MOSFET

刘晓彦,刘恩峰,杜刚,刘弋波,夏志良,韩汝琦

DOI: https://doi.org/10.3969/j.issn.1674-4926.2003.z1.034

2003-01-01

Chinese Journal of Semiconductors

Abstract:A novel scheme for incorporating quantum effect in classical hydrodynamic model is proposed. No additional Equations are needed to solve quantum potential with this scheme, so the complexity ofEquations is largely reduced. Based on this, a HD simulation program is developed. The 25nm gate length MOSFET and 30nm FinFET are simulated.
Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

Yang Liu,Xufeng Wang,Mathieu Luisier,Mark Lundstrom

DOI: https://doi.org/10.1109/isdrs.2009.5378204

2009-01-01

Abstract:In this paper, numerical simulations were used to study the device physics in the In x Ga 1-x As MOSFETs with a gate length of 15 nm (initial) and 10 nm after optimizing the device structure. Key device metrics were identified at the ballistic limit using a 2-D Schrodinger-Poisson solver with effective masses imported from accurate tight-binding calculations. It was concluded that the simulation of a prototype for III-V quantum well MOSFETs with a gate length of 15 nm predicts decent performances if Si-matched series resistance can be obtained. The device has very high injection velocities, but suffers from significant S/D leakage under offstate. As a next step, the possibility of designing high-performance III-V MOSFETs at a gate length of 10 nm will be investigated.
Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Shuo Zhang,Hao Xie,Afshan Khaliq,Wen-Yan Yin,Wenchao Chen,Liang Zhou

DOI: https://doi.org/10.1109/NEMO.2019.8853698

2019-01-01

Abstract:A detailed numerical study on Ge and Si ultrathin-body (UTB) p-type double-gate MOSFET (pDG-FET) is carried out with the help of in-house developed non-equilibrium Green's function (NEGF) simulator employing the six-band k·p model. Six typical confinement/transport crystal orientation configurations and three recent technology nodes are taken into account for better evaluation of device performance. The ballistic velocity and effective mass (m <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> ) are investigated and compared in detail between 3nm-thick Ge and Si films, with a better understanding of crystal orientation effect obtained. Device performance metrics, such as the ballistic ON-current (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> ) and subthreshold swing (SS), are also extracted and compared. With the source-to-drain tunneling (SDT) effect characterized, further numerical analysis indicates that Ge device suffers from more terrible SDT than Si device at all the considered channel lengths. As the physics behind is clarified, some expectations and suggestions for improving device performance, especially for Ge case, are addressed in the end.
Quantum Transport Study of Si Ultrathin-Body Double-Gate pMOSFETs: <inline-formula> <tex-math notation="LaTeX">${I}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">${C}$ </tex-math></inline-form

Shuo Zhang,Jun Z. Huang,Afshan Khaliq,Hao Xie,Wenchao Chen,W. Yin

DOI: https://doi.org/10.1109/ted.2018.2881160

IF: 3.1

2019-01-01

IEEE Transactions on Electron Devices

Abstract:A comprehensive quantum transport study of ultrathin-body silicon double-gate pMOSFETs with gate length <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}}= \textsf {14}$ </tex-math></inline-formula>, 10, and 7 nm is performed by in-house developed nonequilibrium Green’s function solver employing the six-band <inline-formula> <tex-math notation="LaTeX">${k} \cdot {p}$ </tex-math></inline-formula> Hamiltonian. The effects of channel length, body thickness, as well as confinement and transport crystal orientations are studied systematically. Both <inline-formula> <tex-math notation="LaTeX">${I}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${C}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> characteristics are analyzed in this paper. Furthermore, the CMOS performance benchmarking results, such as switching delay, energy consumption, and their product, are calculated with the influence of parasitic resistances and capacitances treated in an appropriate way. It is found that the crystal orientation effect on drive current is significant at both long and short channel lengths, while its effect on effective capacitance is more observable at <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}} = \textsf {7}$ </tex-math></inline-formula> nm. The drive current at <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}} = \textsf {14}$ </tex-math></inline-formula> nm and <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}} = \textsf {7}$ </tex-math></inline-formula> nm can be well explained by average ballistic hole velocity and source-to-drain tunneling ratio, respectively. Meanwhile, the effective capacitance is not only determined by the density of states but also affected by the distribution of holes in the confined direction. Both intrinsic and extrinsic performance assessments suggest that (001)/[100] and (110)/[001] are the optimal confinement/transport crystal orientation configurations at <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}}= \textsf {7}$ </tex-math></inline-formula> nm, while <inline-formula> <tex-math notation="LaTeX">${(}\textsf {110}{)}/[\overline {1}\textsf {10}]$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${(}\textsf {110})/[\overline {1}\textsf {11}]$ </tex-math></inline-formula> are the best choices at longer gate lengths. As <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}}$ </tex-math></inline-formula> shrinks, both intrinsic and extrinsic performances will be better at a scaled body thickness.
Computational investigation of velocity overshoot effects in double gate MOSFETs

Hou, D.Q.,Xia, Z.L.,Du, G.,Liu, X.Y.

DOI: https://doi.org/10.1109/ICSICT.2004.1436678

2004-01-01

Abstract:The velocity overshoot effect has been simulated in nano-scale double gate MOSFETs and compared by different simulation method including hydrodynamic model (HD model) and Monte Carlo method (MC method). As we know, the hydrodynamic model tends to overestimate the velocity overshoot, so how much the overestimate of HD model can reach to, and how this overestimate can impair the simulation accuracy of the final device characteristics, is investigated. Based on the simulation results, the quantitative study of the velocity overshoot effect and its related error on the performance of DG MOSFETs are obtained.
3D Simulation of Mutil-Gate MOSFET with Sub-100nm

夏志良,刘晓彦,刘恩峰,韩汝琦

DOI: https://doi.org/10.3969/j.issn.1674-4926.2003.z1.032

2003-01-01

Chinese Journal of Semiconductors

Abstract:The characteristics of mutil-gate MOSFET ( double gates and trible gates FINFET) are simulated systemically by Using 3D simulation prsgram ISE. The I-V characteristics are investigated. The results show that the performances of Tri gate MOSFET are generally superior to ones of double gate's. However, With the decreasing of the FIN's width, double gate's performances trend to Tri gatre's.
Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

R. S. Kajen,Ken K. F. Chang,Ping Bai,Erping Li

DOI: https://doi.org/10.1109/isicir.2007.4441815

2007-01-01

Abstract:Gate leakage current is becoming an important component of total leakage current in scaled metal oxide semiconductor field effect transistor (MOSFET) devices. The gate leakage current is mostly predicted by drift diffusion (DD) based simulators which do not accurately model non-linear effects such as velocity overshoot and non-equilibrium hot carrier transport in very short gate length transistors. We present a full-band Monte Carlo (MC) model that has been coupled to a Schrodinger equation solver to predict direct tunneling gate currents in a 50 nm gate length (31 nm channel length) n-type MOSFET in saturation mode, in logic on-state and logic off-state. In addition a dual-thickness gate oxide structure is proposed to reduce the gate tunneling leakage current.
Gate Length Dependence of Hot Carrier Injection Degradation in Short Channel Silicon on Insulator Planar Mosfet

Liu Chang,Lu Ji-Wu,Wu Wang-Ran,Tang Xiao-Yu,Zhang Rui,Yu Wen-Jie,Wang Xi,Zhao Yi

DOI: https://doi.org/10.7498/aps.64.167305

IF: 0.906

2015-01-01

Acta Physica Sinica

Abstract:With the continued device scaling and the introduction of new device structures, MOSFET reliability phenomena arising from the hot carrier injection (HCI) stress have received extensive attention from both the academia and the industry community. In this work, the degradations of ultra-scaled silicon on insulator (SOI) MOSFETs under the HCI stress are investigated on devices of different gate lengths (L=30-150 nm). Our experimental data demonstrate that the time evolutions of the threshold voltage change (Vth) under the HCI stress for different gate length devices are the same, and the magnitude of Vth reduces for the shorter devices. The degradation of the device under the HCI stress should be due to both the channel hot carrier (CHC) effect and the bias temperature instability (BTI) effect. The distribution and magnitude of the electric field along the MOSFET's channel are analyzed. It is confirmed that besides the well-known CHC effect in the depletion region close to the drain side, a strong BTI effect co-exists in the channel close to the source side. This degradation mechanism is different from the conventional HCI stress. With the gate length decreasing, the contribution of the aforementioned BTI effect becomes larger, and it dominates in the degradation. One feature of the BTI effects is that the corresponding degradation is small when the gate length is short. This is consistent with our experimental result that the change of Vth is small for the device of short gate length under the accelerated HCI stress. The time evolution of Vth can be described by the equation Vth=A•tn, where A is a constant, t is the stress time, and n is the power law exponent obtained by the curve fitting. In this study, the power law exponent n of pMOSFET is larger than that of nMOSFET. This experimental fact can lead to the point that the BTI effect exists during the HCI stress because the BTI effect in ultra-scaled pMOSFETs is more significant than that in nMOSFETs. The stress-recover experiments of the HCI stress on MOSFTTs show larger recovery in device of shorter gate length. It is found that the ratio of the recovery to the total degradation in the 30 nm gate-length device is almost twice as large as that in the 150 nm device. The degradation from the CHC effect has no recovery, and the larger recovery in the shorter-channel device implies the larger component of the BTI degradation. Another intriguing fact is that our experimental result on SOI MOSFET is inconsistent with the recently reported result on FinFET. We argue that the reported stronger HCI degradation in FinFET may not be ascribed only to the stronger electric field in the shorter channel, but also to the fact that the FinFET' channel is three-dimensionally surrounded by the gate dielectric. This kind of three-dimensional structure significantly increases the chance for electrons or holes to be injected into the dielectric layer. Therefore the HCI reliability of planar SOI MOSFETs may be better than that of FinFETs at the same level of gate length. In conclusion, the BTI effect is an important source of the degradation during the HCI stress in ultra-short-channel device, and it is no more negligible in analyzing the underlying physical mechanism.
Multi subband deterministic simulation of an ultra-thin double gate MOSFET with 2D electron gas

Lu Tiao,Du Gang,Jiang Haiyan,Liu Xiaoyan,Zhang Pingwen

DOI: https://doi.org/10.1109/IWCE.2009.5091125

2009-01-01

Abstract:We present a self-consistent multi subband deterministic solver of the Boltzmann transport equation of the two dimensional (2D) electron gas. The Schödinger equation at each slice in the confinement direction and the two dimensional Poisson equation are self-consistently solved with the Boltzmann transport equation. The energy quantization and the scattering of the 2D electron gas are included. We apply this solver to an ultra-thin body double gate MOSFET and show the influence of the 2Dk scattering to the electron transport. ©2009 IEEE.
Analyzing Short Channel Effects in Deep Submicron MOSFET's Using Variational Method

CHEN Wensong,TIAN Lilin,LI Zhijian

DOI: https://doi.org/10.3321/j.issn:1000-0054.1999.z1.001

1999-01-01

Abstract:Short channel effects will eventually preclude further MOSFET miniaturization. To solve the Poisson's equation involved in short channel effects analysis, variational method is applied. And the expression of the key parameter called natural gate length scale is obtained, which includes the 2 D effects in gate dielectric, channel depletion layer and buried oxide. It is only related to the difference between the boundary condition and long channel solution, thus has clear physical meaning. Comparisons of the short channel effects for uniform channel doping bulk MOSFET, intrinsic channel doping bulk MOSFET, conventional SOI MOSFET and double gate SOI MOSFET are all conducted using our model, and the results are verified by 2 D numerical simulations. So it is confirmed that our model can correctly simulate subtle differences in different structures, and gives a guidance for a new device structure design with suppressed short channel effects.
Simulation Investigation of Double-Gate CNR-MOSFETs with a Fully Self-Consistent NEGF and TB Method

Ximeng Guan,Ming Zhang,Qiang Liu,Zhiping Yu

DOI: https://doi.org/10.1109/iedm.2007.4419058

2007-01-01

Abstract:Carbon nanoribbon (CNR) double-gate (DG) MOSFETs are simulated using fully self-consistent non-equilibrium Green's function (NEGF) approach and tight-binding method (TB). Transfer and output characteristics, as well as subthreshold slope for various channel length and width are reported. DIBL and SCE effects are quantitatively evaluated and approaches to improving gate controllability are discussed.
3-D numerical simulation study on 20 nm NMOSFET design

Min Shi,Jin He,Zhiwei Liu,Wenping Wang,Wei Zhao,Ruonan Wang,Wen Wu,Yong Ma,Dongwei Zhang,Wei Bian,Mansun Chan,Xukai Zhang,Lining Zhang

DOI: https://doi.org/10.1166/jctn.2011.1841

2011-01-01

Journal of Computational and Theoretical Nanoscience

Abstract:The design requirement of the nano-scale bulk N-MOSFET with 20 nm effective gate length is studied in this paper based on the 3-D numerical simulation. To acquire the shallow source/drain extension profile, the PCl 5 implantation with low energy and rapid thermal anneals is performed. The halo implant is used to suppress the sub-threshold leakage and short channel effect. The final drives current of 320 A/um corresponding to the leakage current of 200 nA/um has been achieved in 20 nm N-MOSFET at V dd = 0.8 V. Copyright © 2011 American Scientific Publishers.
Simulation of Advanced N-Mosfet Emphasizing Quantum Mechanical Effects on 2-D Characteristics

Yutao Ma,Lifeng Chen,Bo Jiang,Min Zhang,Lilin Tian,Zhiping Yu,Litian Liut,Zhijian Li

DOI: https://doi.org/10.1007/978-3-7091-6244-6_89

2001-01-01

Abstract:Advanced n-MOSFET structure with featured size of 90nm channel length is simulated using a newly developed Quantum Mechanical (QM) correction model based on Modified Airy Function (MAF) method. The influences of Quantum Mechanical Effects (QMEs) on the carrier distribution in the whole channel is included and the output as well as the transfer characteristics are compared with and without QM correction. It is demonstrated that QMEs result in more severe short channel effects such as threshold voltage roll off and DIBL effects.
A Two-Dimensional Analytical Model for Short Channel Junctionless Double-Gate MOSFETs

Chunsheng Jiang,Renrong Liang,Jing Wang,Jun Xu

DOI: https://doi.org/10.1063/1.4921086

IF: 1.697

2015-01-01

AIP Advances

Abstract:A physics-based analytical model of electrostatic potential for short-channel junctionless double-gate MOSFETs (JLDGMTs) operated in the subthreshold regime is proposed, in which the full two-dimensional (2-D) Poisson’s equation is solved in channel region by a method of series expansion similar to Green’s function. The expression of the proposed electrostatic potential is completely rigorous and explicit. Based on this expression, analytical models of threshold voltage, subthreshold swing, and subthreshold drain current for JLDGMTs were derived. Subthreshold behavior was studied in detail by changing different device parameters and bias conditions, including doping concentration, channel thickness, gate length, gate oxide thickness, drain voltage, and gate voltage. Results predicted by all the analytical models agree well with numerical solutions from the 2-D simulator. These analytical models can be used to investigate the operating mechanisms of nanoscale JLDGMTs and to optimize their device performance.
Study of 20nm bulk FINFET by using 3D full band Monte Carlo method with Effective Potential Quantum Correction

Gang Du,Wei Zhang,Juncheng Wang,Tiao Lu,Pingwen Zhang,Xiaoyan Liu

DOI: https://doi.org/10.1109/ICSICT.2010.5667816

2010-01-01

Abstract:As MOSFETs scaling down to nano-scale, short channel effect(SCE) become a critical issue. Multiple channel MOSFET structure such as FINFET has well gate controllability on channel charge, and will be used in nano-scale CMOS technology. In this work the performance of 20nm bulk FINFET is investigated by Using 3D full band Monte Carlo Method with Effective Potential Quantum Correction. Gate and drain bias affect on the carrier density, velocity and energy distribution are introduced. The transit time and SSEC Cgs and Cgd as a function of Vds are showed. Results show about 0.1 psec intrinsic transit time at on state in this 20nm gate length device.
Simulation Of Source-To-Drain (S/D) Tunneling In Sub-10nm Dg Mosfets With Wkb Method

B Jiang,Dw Zhang,Qt Zheng,Ll Tian,Zp Yu

2003-01-01

Abstract:As the gate length of MOSFETs keeps sealed down, source-to-drain (S/D) tunneling current becomes significant. S/D tunneling current is simulated in dais work using WKB method, and is based on the quantum ballistic transport model. The dependence of the S/D tunneling current on channel length and silicon film thickness is examined. It is shown that with channel length as small as 6nm, only extremely thin silicon film (thickness of 1nm) can deliver good device characteristics. Comparison to NEGF simulation confirms the validity of the proposed approach.
Quantum modeling for nanoscale double gate MOSFETs based on Green's function

Wang Wei,Sun Jianping,Gu Ning

2006-01-01

Abstract:A quantum kinetic model based on two-dimensional(2D) non-equilibrium Green's functions(NEGF) solved self-consistently with Poisson's equations is developed to investigate the device behavior of nanoscale double-gate MOSFETs(metal-oxide-semiconductor field effect transistor).The influence of device dimensions on current characteristics has been studied.The simulated results indicate that thinner and longer channel can reduce short channel effects,while thicker gate oxide will lead to higher subthreshold slopes.In addition,scattering effects on the channel current degradation are evaluated using self-energies and approaches for improvement are indicated.The present model has the features of being conceptually simple and computationally stable,and is suitable for modeling various nanoscale devices including device structures consisting of quantum wires and quantum dot arrays,as well as the design of nanoscale MOSFETs.

Hydrodynamic Simulation of Sub 50nm Double Gate MOSFET

Influence of Channel Length, Thickness, and Crystal Orientation in Ultra-Scaled Double-Gate Pmosfets

Performance Analysis of Ultra-thin-Body, Double-Gate pMOSFETs at 5 nm Technology Node

A comparative study on electrothermal characteristics of nanoscale multiple gate MOSFETs.

Device Simulation for Nanoscale MOSFET

Simulation Study of Device Physics Issues in III&amp;#x2013;V MOSFETs at 10 Nm Node

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Computational investigation of velocity overshoot effects in double gate MOSFETs

3D Simulation of Mutil-Gate MOSFET with Sub-100nm

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Gate Length Dependence of Hot Carrier Injection Degradation in Short Channel Silicon on Insulator Planar Mosfet

Multi subband deterministic simulation of an ultra-thin double gate MOSFET with 2D electron gas

Analyzing Short Channel Effects in Deep Submicron MOSFET's Using Variational Method

Simulation Investigation of Double-Gate CNR-MOSFETs with a Fully Self-Consistent NEGF and TB Method

3-D numerical simulation study on 20 nm NMOSFET design

Simulation of Advanced N-Mosfet Emphasizing Quantum Mechanical Effects on 2-D Characteristics

A Two-Dimensional Analytical Model for Short Channel Junctionless Double-Gate MOSFETs

Study of 20nm bulk FINFET by using 3D full band Monte Carlo method with Effective Potential Quantum Correction

Simulation Of Source-To-Drain (S/D) Tunneling In Sub-10nm Dg Mosfets With Wkb Method

Quantum modeling for nanoscale double gate MOSFETs based on Green's function

Simulation Study of Device Physics Issues in III–V MOSFETs at 10 Nm Node