Abstract:In this paper, we quantitatively investigate the overestimation of the Velocity overshoot (VO) effects in the Hydrodynamic (HD) model, by simulating nanoscale Double gate (DG) MOSFETs. The simulation results are evaluated by the Monte Carlo (MC) method. As we know, the overestimation of VO in HD model will lead to serious errors in predicting nanoscale devices' performance. We explored the overestimation of on currents due to the overestimation of VO in HD mode. The dependence of the overestimation values on silicon thickness and channel length is presented and discussed. In HD model, the overestimation of on currents rises with increasing silicon thickness. The influence of the channel length normalized with silicon thickness is somewhat complicated. For shorter channel devices, the accuracy of the velocity near the source side in the channel is particularly critical to obtain right values of on current. While for devices with relatively longer channel, on currents become more sensitive to the velocity near the drain side.

Computational investigation of velocity overshoot effects in double gate MOSFETs

Quantitative Investigation of the Velocity Overshoot Overestimation'S Impact on Predicting Device Characteristics in Hd Model

Modeling Effects of Velocity Overshoot in Extremely Scaled MOSFETs

Influence of Channel Length, Thickness, and Crystal Orientation in Ultra-Scaled Double-Gate Pmosfets

Numerical Investigation of Low Frequency Noise in MOSFETs with High-k Gate Stacks

Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Hydrodynamic Simulation of Sub 50nm Double Gate MOSFET

Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study

Physical Compact Modeling and Analysis of Velocity Overshoot in Extremely Scaled CMOS Devices and Circuits

Negative Gate-Overlap in Nanoscaled DG-MOSFETs with Asymmetric Gate Bias

Simulation Study of Quasi-Ballistic Transport in Asymmetric DG-MOSFET by Directly Solving Boltzmann Transport Equation

A Unified Drain Current Model for Nanoscale Double-Gate and Surrounding-Gate MOSFETs Incorporating Velocity Saturation

A Comparison Study of Velocity Saturation Models for Gate-all-around MOSFETs

Investigation of Gate Current in Nano-Scale Mosfets by Monte Carlo Solution of Quantum Boltzmann Equation

Evaluation Of Quasi-Ballistic Transport In Nano-Mosfets By Deterministic Solver Of The Time Dependent Multi-Subbands Boltzmann Transport Equation

Investigating scattering effects in nano-scale double gate MOSFETs by using direct solution of the Boltzmann transport equation and Poisson-Schrodinger equation method

Analytical Modeling of Threshold Voltage for Double Gate MOSFET

Generic DG MOSFET Analytic Model with Vertical Electric Field Induced Mobility Degradation Effects

An improvement to computational efficiency of the drain current model for double-gate MOSFET