Abstract:In this paper, we present an extended back gate-on-drain negative capacitance TFET (DEBG-NC-TFET) for enhanced DC and analog/HF performance. TCAD-based simulations reveal that DEBG-NC-TFET offers a significant enhancement in ION and SS because of the Ferroelectric layer (FEL) introduced into the gate-oxide layer of the device, without deteriorating other parameters of the device. This work examines the effects of various factors of NC, such as remnant polarization (Pr) and coercive electric field (Ec) on memory window (MW) to improve the read margin of the device. With an optimum thickness of FEL, DEBG-NC-TFET is found to offer a huge reduction in IAMB with unchanged IOFF and ION as compared with those of the symmetric gate-drain overlap (DSYG) and conventional DG-NC-TFET. The vertical electrical field induced in drain increases the depletion layer at channel-drain interface, which enhances the barrier width and restricts the charge carriers from tunneling at the ambipolar state. Furthermore, incorporating back gate-drain overlap into DG-NC-TFET resolves the trade-off between parasitic capacitances and ambipolarity as overall gate capacitance is found to be reduced for DEBG-NC-TFET. Apart from reduction in gate parasitic capacitance, various HF parameters like gain–bandwidth product (GBWP) and cutoff-frequency (fT) are also found to be improved for DEBG-NC-TFET as compared to DSYG-NC-TFET. Finally, a resistive load inverter analysis shows that various parameters like propagation delay, full swing, and peak over- and undershoots are significantly improved when only back gate overlaps the drain region of DG-NC-TFET.

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