Abstract:Inverted coplanar or bottom-gate bottom-contact (BGBC)-type thin-film transistors (TFTs) present several advantages for the manufacture and application of organic TFTs, although serious difficulties are encountered when trying to achieve sufficiently high performance. Recently, it was demonstrated that both high mobility and ideal on-off switching are attainable in BGBC-type printed organic TFTs with highly clean semiconductor-gate dielectric interfaces. However, an unknown channel material dependence in the device performance is found. Here, we show that the stability of semiconductor/metal/dielectric ternary interfaces is a crucial factor in the operation of BGBC-type organic TFTs. We fabricate single-crystal organic semiconductor (OSC) films with various numbers of layers using two different materials (phenyl/alkyl-substituted benzothieno[3,2- b ]benzothiophene and phenyl/alkyl-substituted benzothieno[3,2- b ]naphtho[2,3- b ]thiophene) on highly lyophobic Cytop gate dielectric surfaces. The transfer characteristics exhibit notable time-dependent degradation, which clearly depends on the material, layer number, and encapsulation. Kelvin-probe force microscopy measurements reveal that the degradation is ascribed to contact resistance at the source electrodes, while it can be more suppressed in multilayer (two or more layers) OSCs. Atomic force microscopy and in-plane x-ray diffraction profiles present signs of the transformation in single molecular bilayer OSCs laid on the electrodes. The results suggest the importance of the quality of the OSC layer at ternary interfaces, providing a clue for improving the performance of BGBC-type organic TFTs. https://doi.org/10.1103/PhysRevApplied.21.024005 Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI. Published by the American Physical Society

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