Abstract:In this study, the initial electrical properties, positive gate bias stress (PBS), and drain current stress (DCS)-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with various active layer thicknesses (TIGZO) are investigated. As the TIGZO increased, the turn-on voltage (Von) decreased, while the subthreshold swing slightly increased. Furthermore, the mobility of over 13 cm²&middot;V&minus;1&middot;s&minus;1 and the negligible hysteresis of ~0.5 V are obtained in all of the a-IGZO TFTs, regardless of the TIGZO. The PBS results exhibit that the Von shift is aggravated as the TIGZO decreases. In addition, the DCS-induced instability in the a-IGZO TFTs with various TIGZO values is revealed using current&ndash;voltage and capacitance&ndash;voltage (C&ndash;V) measurements. An anomalous hump phenomenon is only observed in the off state of the gate-to-source (Cgs) curve for all of the a-IGZO TFTs. This is due to the impact ionization that occurs near the drain side of the channel and the generated holes that flow towards the source side along the back-channel interface under the lateral electric field, which cause a lowered potential barrier near the source side. As the TIGZO value increased, the hump in the off state of the Cgs curve was gradually weakened.

P‐13: Electrical Characteristics and Stability of Double‐Gate A‐igzo Thin Film Transistors with Self‐Aligned Top‐Gate

P‐9: Improved Electrical Stability of Double‐Gate A‐igzo TFTs

P-1.14: The Influence of Dual-channel on the Performance of Self-Align Top-Gate IGZO Thin Film Transistors

30.3: Impact of Top Gate Insulator Deposition Temperature on Electrical Performance of Dual‐Gate a‐InZnO TFTs

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

CHARACTERISTICS OF DOUBLE-GATE a-IGZO TFT

18‐4: Mechanical Stress‐Induced Recoverable and Unrecoverable Deteriorations of Flexible A‐ingazno Thin‐Film Transistor

Scalability and Stability Enhancement in Self-Aligned Top-Gate Indium- Zinc-Oxide TFTs with Al Reacted Source/Drain

Stablity research and application of amorphous indium gallium zinc oxide tfts for active matrix organic light-emitting diode display

Stability enhancement of top-gate self-aligned tin-doped indium gallium oxide thin film transistor by low temperature annealing

P‐1.23: High‐Performance Dual‐Gate A‐igzo/a‐izo Thin‐Film Transistors

Abnormal Bias Instabilities Induced by Lateral H2O Diffusion into Top-Gate Insulator of A-Ingazno Thin-Film Transistors

P‐1.14: the Influence of Bottom Gate Dielectric Roughness on the Performance of Double‐Gate A‐igzo Thin Film Transistors

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

Double Gated a-InGaZnO TFT Properties Based on Quantitative Defect Analysis and Computational Modeling

P‐1.5: Dynamic Current Stress‐Induced Instabilities of A‐ingazno TFTs

Abnormal Hump and Two-Step Degradation of Top Gate a-InGaZnO TFTs Under Positive Bias Stress

Degradation Mechanism and Stability of Flexible Self-Aligned Top-Gate InGaZnO TFT

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

P-1.6: Effect of Deposition Condition of Passivation Layer on the Performance of Self-Aligned Top-Gate a-IGZO TFTs

High-Performance Self-Aligned Top-Gate Amorphous InGaZnO TFTs with 4 Nm-Thick Atomic-Layer-Deposited AlOx Insulator