Abstract:ABSTRACTAs technology is aggressively scaled, nano-regime VLSI designs are becoming increasingly susceptible to process variations. Unlike pre-silicon optimization, post-silicon techniques can tune the individual die to better meet the power-delay constraints. This paper proposes a variation-aware methodology for the simultaneous gate sizing and clustering for post-silicon tuning with adaptive body biasing. The proposed methodology uses an accurate table look-up model and fully explores the interaction between gate sizing and optimal body bias based clustering. In addition, it is suitable for industrial test cases with tens of thousands gates. Our optimization methodology includes a body bias distribution alignment strategy to mitigate the impact of critical gates. In this way, the cluster's body bias voltage is not simply determined by only a few critical gates. We also prove the linear dependence between the mean of the body bias probability distribution and the gate size. Based on this, we further investigate a simultaneous sizing and re-clustering algorithm for better leakage savings. A circuit re-balancing and gate snapping scheme is then suggested to map the solution to a standard cell library. Compared with arecently-reported method, the proposed methodology can obtain on average 25.5% leakage saving at nearly the same run time.

Gate Overlap Optimization and Performance Variation for Thin-Film Transistors with Source/Drain Edge Waviness

Variation-aware gate sizing and clustering for post-silicon optimized circuits.

Impact of Gate Coupling and Misalignment on Performance of Double-gate Organic Thin Film Transistors

Influence of Gate-Source/Drain Misalignment on the Performance of Bulk Finfets by A 3d Full Band Monte Carlo Simulation

Asymmetry Degradation Behavior Under Forward and Backward Overlap Dynamical Stress in Large-Size Amorphous InGaZnO TFT

A Novel Comb-Gate-Overlap-Source Tunnel Field-Effect Transistor Based on the Electric Field Fringe Effect

The Application of Gate-Drain Underlap Architecture in TFET-based Inverters

A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

Performance Variation According to Device Structure and the Source/Drain Metal Electrode of a-IGZO TFTs

3-D Simulation of Geometrical Variations Impact on Nanoscale FinFETs

Gate Dielectric Leakage Reduction in Hard-Mask Defined and Dry-Etch Patterned Organic TFTs Devices

Insights on Asymmetrical Electrode Geometric Effect to Enhance Gate-Drain-Bias Stability of Vertical-Channel InGaZnO Thin-Film Transistor

Impact of Gate Overlap on Performance of Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors Including Gate Induced Barrier Lowering Effect

Impact of random discrete dopant in extension induced fluctuation in gate–source/drain underlap FinFET

8.2: Invited Paper: Elevated‐Metal Metal‐Oxide Thin‐Film Transistor with Self‐Aligned Source/Drain Regions

Estimation and Compensation of Process Induced Variations in Nanoscale Tunnel Field Effect Transistors (TFETs) for Improved Reliability

An External Vth-Compensation Scheme for Narrow Bezel Gate Driver Circuit

Vertical Surrounding Gate Transistor for High Density and Low Voltage Operation in DRAM

Performance Of Asynchronous Double-Gate Poly-Si Thin-Film Transistors

The impact of device parameter variation on double gate tunneling FET and double gate MOSFET

Impacts of Vertically Stacked Monolithic 3D-IC Process on Characteristics of Underlying Thin-Film Transistor