Abstract:A heterogeneous gate insulator (GI) that can achieve high reliability while expressing the high‐mobility (>50 cm2 Vs−1) characteristics of indium‐rich atomic layer depostion (ALD)‐based indium‐gallium‐zinc oxide (IGZO) is developed through an in situ ALD process. A net zero strategy is proposed that independently controls the donor and trap within the GI, achieving the high‐stability of positive‐bias‐temperature‐stability (∆Vth = −0.02 V) and constant‐current‐stability (∆ID = 0.49%). The reliability of oxide‐semiconductor (OS) thin‐film transistors (TFTs) is significantly influenced by the gate insulator (GI). During electrical bias stress, the defect sites near the semiconductor/GI interface and/or within the GI may trap electrons, which makes the threshold voltage (Vth) shift toward positive values. On the other hand, carbon (C) or hydrogen (H) atoms may diffuse from the GI into the active layer, and act as shallow donors, which induce negative Vth shifts (ΔVth). In this paper, an in situ atomic layer deposition (ALD)‐based GI heterostructure is introduced, which consists of a stack of two complementary materials, namely Al2O3 and SiO2. Here, a competition occurs between electron trapping in Al2O3 (positive ΔVth) and carrier generation from H atoms in SiO2 (negative ΔVth) which allows the achievement of nearly zero ΔVth under positive bias temperature stress (PBTS). This strategy is successfully applied to a high‐mobility (>50 cm2 Vs−1) ALD‐based indium‐gallium‐zinc oxide (IGZO) device, resulting in a net ∆Vth of −0.02 V under PBTS and drain current variation (∆ID) of +0.49% under constant current stress (CCS). The application of an in situ ALD process thus offers valuable insights to resolve the mobility versus reliability trade‐off in high‐performance oxide TFTs.

Insights on Asymmetrical Electrode Geometric Effect to Enhance Gate-Drain-Bias Stability of Vertical-Channel InGaZnO Thin-Film Transistor

P‐6.1: Asymmetric Effects of Gate‐Bias Stress Voltage on the Stability under Positive and Negative Gate‐Bias Stress of A‐igzo TFTs

Origin of degradation phenomenon under drain bias stress for oxide thin film transistors using IGZO and IGO channel layers

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

Impact of Strategic Approaches for Improving the Device Performance of Mesa-shaped Nanoscale Vertical-Channel Thin-Film Transistors Using Atomic-Layer Deposited In–Ga–Zn–O Channel Layers

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body in 0.53 Ga 0.47 As-on-Insulator N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Asymmetrical degradation behaviors in amorphous InGaZnO thin-film transistors under various gate and drain bias stresses

Enhancing Reliability of Short-channel Dual gate InGaZnO Thin Film Transistors by Bottom-gate Oxide Engineering

P.18: Effects of Interface and Bulk States on the Stability of Amorphous InGaZnO Thin Film Transistors under Gate Bias and Temperature Stress

The Effect Of Asymmetrical Electrode Form After Negative Bias Illuminated Stress In Amorphous Igzo Thin Film Transistors (Vol 110, 103502, 2017)

On the Reliability of an InGaZnO Thin-Film Transistor under Negative Bias Illumination Stress

Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers

High-performance a-ITZO TFTs with high bias stability enabled by self-aligned passivation using a-GaOx

Enhanced Bias Stress Stability of A-Ingazno Thin Film Transistors by Inserting an Ultra-Thin Interfacial InGaZnO:N Layer

Enhancement of Positive Bias Stress Stability for IGZO TFTs by A CAAC Gd-AZO Bulk Layer

Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths

Influence Of Passivation Layers On Positive Gate Bias-Stress Stability Of Amorphous Ingazno Thin-Film Transistors

Reliability Engineering of High‐Mobility IGZO Transistors via Gate Insulator Heterostructures Grown by Atomic Layer Deposition

Abnormal Hump and Two-Step Degradation of Top Gate a-InGaZnO TFTs Under Positive Bias Stress