Abstract:The short‐channel tunneling transistor comprising all 2D components is developed, exhibiting high switching performance due to the energy band modulation of vertical heterojunction through the dual‐gates. Leveraging the unique short‐channel and tunneling mechanism, it can circumvent the general issues of voltage spikes and long reverse recovery time, realizing an access to high‐frequency integrated circuits (IC) interface. With continuous size scaling, the surface dangling bonds and short‐channel effects will degrade silicon based transistor performance. Thus, it is of great importance to seek new channel materials and transistor architectures to further continue Moore's law. Herein, a new ultra‐thin short‐channel tunneling transistor is developed comprising all 2D‐ components. Distinct from usual 2D planar transistor, this device is configured with vertical MoS2/WSe2 junction and in‐plane WSe2 channel, the switch states are realized by the gate‐regulated barrier height of heterojunction, enabling the transition of transport mechanism between thermionic‐emission and tunneling. Under dual‐gate configuration, the transistor exhibits high performance with drive current of 4.58 μA, on/off ratio of 4 × 107, subthreshold swing (SS) of 97 mV decade−1 and drain‐induced barrier lowering (DIBL) of 12 mV V−1, that can meet the requirement of logical applications in integrated circuits (IC). Taking advantage of the high‐speed tunneling current and unique short‐channel architecture, the device overcomes the issues of voltage spikes and long reverse recovery time that exist in usual electric components, and thus gains an access to the IC interface. This work provides a proof‐of‐concept transistor architecture relying on dual‐gate modulation, opening up a promising perspective for next generation low‐power, high‐density, and large‐scale IC technologies.

SOI Schottky Barrier Tunnelling Transistors Fabricated with Spacer Technology

Fabrication of the sub-100 nm thin body SOI Schottky barrier tunneling transistors with sidewall etchback technology

n channel SOI Schottky barrier tunneling transistors

Feasible approach to the fabrication of asymmetric Schottky barrier MOSFETs by using the spacer technique

A planar asymmetric Schottky barrier source/drain structure for nano-scale MOSFETs

Self-depleted T-gate Schottky barrier tunneling FET with low average subthreshold slope and high ION/IOFF by gate configuration and barrier modulation

Effective Schottky Barrier Lowering in Silicon-on-insulator Schottky-barrier Metal-Oxide-semiconductor Field-Effect Transistors Using Dopant Segregation

Comparative Study of Tunnel Field Effect Transistors with Dopant-Segregated Schottky Source/Drain

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

Role of Si Implantation in Control of Underlap Length in Schottky-barrier Source/drain MOSFETs on Ultrathin Body SOI

Device physics and design of T-gate Schottky barrier tunnel FET with adaptive operation mechanism

High performance tunnel field-effect transistor by gate and source engineering.

SB-MOSFETs in UTB-SOI Featuring PtSi Source/Drain With Dopant Segregation

Fully Depleted UTB and Trigate N-Channel MOSFETs Featuring Low-Temperature PtSi Schottky-Barrier Contacts with Dopant Segregation

Schottky Barrier Height Tuning Via The Dopant Segregation Technique Through Low-Temperature Microwave Annealing

A Low Loss Soi Lateral Trench Igbt and Superjunction Device with Insulated Trench Barrier

Comprehensive Understanding of Schottky Barrier Tunneling FET Built Upon Ultrathin Silicon Nanowire for Monolithic 3D Integration

Silicide As Diffusion Source For Dopant Segregation In 70-Nm Mosfets With Ptsi Schottky-Barrier Source/Drain On Ultrathin-Body Soi

2D Short‐Channel Tunneling Transistor Relying on Dual‐Gate Modulation for Integrated Circuits Application

On the Performance of Single-Gated Ultrathin-Body SOI Schottky-barrier MOSFETs

Experimental investigation of Quasi-SOI MOSFET for highly scaled devices