Abstract:Two-dimensional materials-based field-effect transistors (2DM-FETs) exhibit both ambipolar and unipolar transport types. To physically and compactly cover both cases, we put forward a quasi-Fermi-level phase space (QFLPS) approach to model the ambipolar effect in our previous work. This work aims to further improve the QFLPS model's numerical aspect so that the model can be implanted into the standard circuit simulator. We first rigorously derive the integral-free formula for the drain-source current to achieve this goal. It is more friendly to computation than the integral form. Besides, it explicitly gives the correlation terms between the electron and hole components. Secondly, to work out the boundary values required by the new expressions, we develop a fast evaluation algorithm for the surface electrostatic potential based on the zero-temperature limit property of the 2DM-FET system. By calibrating the model with the realistic device data of black phosphorus (BP) and monolayer molybdenum disulfide (ML-MoS2) FETs, the completed algorithm is tested against practical cases. The results show a typical superiority to the benchmark algorithm by two orders of magnitude in time consumption can be achieved while keeping a high accuracy with 7 to 9 significant digits.

Two-dimensional numerical simulation of deep submicron thin-film SOI MOSFET

Integrated device and circuit simulation of thin film deep submicron CMOS/SOI circuits

Simulation for a Novel Vertical SOI Configuration

Analytic subthreshold slope model for deep-submicrometer fully depleted SOI MOSFET's

New physical I-V model of deep-submicron FD SOI MOSFETs for analogue/digital circuit simulation

Threshold Voltage Modeling of Deep-Submicron Double-Gate Fully-Depleted SOI MOSFET

A two-dimensional physically-based current model for deep-submicrometer SOI dynamic threshold-voltage MOSFET

A 3D Parallel Monte Carlo Simulator for Semiconductor Devices

An efficient model algorithm for two-dimensional field-effect transistors

Two-dimensional analytical model for a non-lightly doped drain SOI MOSFET

A General-purpose Two-dimensional Semiconductor Simulator

Quasi-two-dimensional Subthreshold Current Model of Deep Submicrometer SOI Drive-in Gate Controlled Hybrid Transistors with Lateral Non-Uniform Doping Profile.

A Subthreshold Current Model of Fully-Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Field Effect Transistors with Vertical Gaussian Profile

A Rigorous Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-On-Insulator (Utb-Soi) Mosfets

An Analytical Subthreshold Swing Model for Fully-Depleted MOSFETs with Vertical Gaussian Profile Fabricated on Modified Silicon-on-insulator Wafers

Two-dimensional model of fully depleted dual-material-gate single-halo SOI MOSFET

Analyzing Short Channel Effects in Deep Submicron MOSFET's Using Variational Method

Suppress of Substrate-Assisted Depletion Effects in Super Junction LDMOS on Thin Film SOI

Quarter-micrometre Surface and Buried Channel PMOSFET Modelling for Circuit Simulation

Multi subband deterministic simulation of an ultra-thin double gate MOSFET with 2D electron gas

A Proper Deep Submicron Mosfet Model (Pdsmm) And Its Applications For Delay Modeling Of Cmos Inverters