Abstract:Solving the two-dimensional Poisson's equation in the channel region using the method of separation of variables, we have obtained the potential distribution in the silicon film of fully depleted SOI MOSFET's. From the derived two-dimensional potential distribution in the channel region, an analytic model for the subthreshold slope factor has been developed. Our model can be simplified using the first-term approximation, therefore, it is computationally efficient, yet retains accuracy necessary for practical circuit simulation. The results of the proposed model are compared with those of numerical simulator MEDICI, and good agreement is obtained for channel length down to deep-submicrometer regime. Based on the developed model, the dependence of subthreshold slope S-factor on various device parameters (such as channel length, channel doping concentration, thickness of gate oxide and SOI film) and designing criteria for deep submicrometer FD SOI MOSFET's are discussed in this paper.

Integrated device and circuit simulation of thin film deep submicron CMOS/SOI circuits

Two-dimensional numerical simulation of deep submicron thin-film SOI MOSFET

Electromagnetic-Circuital-Thermal Co-Simulation for Integrated Circuits and Microwave Applications

Millimeter wave and sub-millimeter wave circuits for integrated system-on-a-chip

Simulation for a Novel Vertical SOI Configuration

Physical design optimization of MOSFETs for millimeter wave and sub-millimeter wave circuits

Review of Fast Timing Simulation Techniques for Deep Submicron Integrated Circuits

New physical I-V model of deep-submicron FD SOI MOSFETs for analogue/digital circuit simulation

CMOS/SOI ICs simulation and parameter extraction

TFSOI/CMOS ICs simulation using SPICE

Electrical-Thermal Co-Simulation For Through Silicon Via And Active Tier In 3-D Ic

Quarter-micrometre Surface and Buried Channel PMOSFET Modelling for Circuit Simulation

A 3D Parallel Monte Carlo Simulator for Semiconductor Devices

IC Simulations of the On-chip Integration for SOI CMOS and MEMS

An investigation on the robustness, accuracy and simulation performance of a physics-based deep-submicronmeter BSIM model for analog/digital circuit simulation

The Development of the Next Generation Bsim for Sub-100nm Mixed-Signal Circuit Simulation

A Tool Towards Integration of IC Process, Device, and Circuit Simulation

Study on self-aligned silicide CMOS/SOI technology

BSIM Model Research and Recent Progress

Analytic subthreshold slope model for deep-submicrometer fully depleted SOI MOSFET's

The Investigation of Key Technologies for Sub-0.1-μm CMOS Device Fabrication