CMOS/SOI ICs simulation and parameter extraction

Xuewen Gan,Xuemei Xi,Yimin Li,Yangyuan Wang

1995-01-01

Tien Tzu Hsueh Pao/Acta Electronica Sinica

Abstract:An unified and systematic parameter extraction for SOI MOSFETs has been presented, thereby the CMOS/SOI ICs simulation can use simulator such as SPICE after implemented with SOI MOSFET model. The results show that the SOI MOSFET model and the utilization of extraction program are trustworthy.

What problem does this paper attempt to address?

TFSOI/CMOS ICs simulation using SPICE

Yangyuan Wang,Xuemei Xi,Xuewen Gan,YuHua Cheng,Yingxue Li

1994-01-01

Tien Tzu Hsueh Pao/Acta Electronica Sinica

Abstract:A charge-based model for dc and transient circuit simulation was implemented in SPICE. The utility and computing efficiency of the SOIMOSFET model implementation were demonstrated by simulating several representative SOI/CMOS circuits. It was shown that the shorter the channel length and the thinner the SI-film thickness, the faster the SOI/CMOS circuit speed, which can compensate the low speed caused by decreased power voltage.
A new small-signal parameter extraction approach for SOI MOSFET

Huailin, Liao,Zhang Guoyan,Huang Lu,Zhang Xing

DOI: https://doi.org/10.1109/ICSICT.2001.982043

2001-01-01

Abstract:A new and accurate parameter extraction method for SOI MOSFET small-signal equivalent circuit is presented. The extrinsic elements including gate, source and drain series resistance inductance are extracted, and the results are used to de-embed the extrinsic equivalent circuit components from the intrinsic ones. In the meanwhile, a constant assumption for all intrinsic elements in the frequency band of interest is applied, which makes the extraction problem reduce to an optimization procedure. This approach is very efficient and needs no additional measurements. Good agreement is obtained between the simulation results and the measured data.
Nonlinear Modeling of RF Switch Based on COMSOL Parameter Extraction

Chenghan Wu,Sichen Yang,Jiefeng Zhou,Erping Li

DOI: https://doi.org/10.1109/icmmt52847.2021.9617896

2021-01-01

Abstract:This paper presents the modeling of nonlinear characteristics of radio frequency (RF) switches based on parameter extraction in COMSOL Multiphysics. We separate the nonlinearity of RF switch to transistor nonlinearity and substrate nonlinearity of the internal Silicon-on-insulator field effect transistors (SOI MOSFETs). In COMSOL, the parameters related to the substrate part are extracted, and the equivalent expression of the buried oxide layer capacitance is obtained. By stacking SOI MOSFETs, the nonlinear model and harmonic characteristics of RF switch will be discussed. Compared with the literature, the model shows pretty good non-linear predictability.
Accurate Small Signal Modeling and Extraction of Silicon Mosfet for Rf Ic Application

Yang Tang,Li Zhang,Yan Wang

DOI: https://doi.org/10.1016/j.sse.2010.06.025

IF: 1.916

2010-01-01

Solid-State Electronics

Abstract:A simple scalable non-quasi-static (NQS) small signal equivalent circuit (SSEC) model of Si MOSFET and corresponding direct extraction methodology are developed in this paper. Compared with the conventional SSEC, a parallel gate drain branch is supplemented to describe parasitic gate-drain coupling under high frequency up to 40GHz together with the impact of substrate loss, terminal resistances and inductances. The new extraction methodology is developed that all extrinsic parasitic components are extracted from zero bias Z-parameters and intrinsic components are extracted from ON state Y-parameters. The proposed model and extraction methodology are verified to achieve good agreement between simulated and measured S-parameters from 0.1 to 40GHz for devices fabricated with 0.13μm CMOS technology. The extracted bias dependent model could be further used to construct a nonlinear model in large signal applications.
Integrated device and circuit simulation of thin film deep submicron CMOS/SOI circuits

Xing Zhang,Yongquan Shi,Chang Huang

1996-01-01

Tien Tzu Hsueh Pao/Acta Electronica Sinica

Abstract:An integrated device and circuit simulator for thin film (50-400nm) submicron (0.5-1.0��m) and deep submicron (0.15, 0.25 and 0.35��m) CMOS/SOI integrated circuits has been developed. This simulator combines device numerical simulation with circuit numerical simulation by coupling the connecting stage of SOI MOSFET using an integrated numerical model. The characteristics and mechanism of thin film submicron and deep submicron CMOS/SOI ring oscillators were discussed. The simulation results are identical with experimental results.
New physical I-V model of deep-submicron FD SOI MOSFETs for analogue/digital circuit simulation

Xuemei Xi,Höngmei Wang,Xing Zhang,Yangyuan Wang

DOI: https://doi.org/10.1109/ICSICT.1998.785915

1998-01-01

Abstract:A new analytical current model in strong inversion operation region for fully depleted SOI/MOSFET with channel lengths down to deep submicrometer range is developed with only one single expression for both linear and saturation region without using smoothing function. The convergence when employed in circuit simulators will be improved. Measurements on devices of varied geometry show good agreement with model predictions.
A simple parameter extraction method for on-chip inductors

Xiaoming Lu,Jingtian Xi,Na Yan,Hao Min

DOI: https://doi.org/10.1109/ASICON.2009.5351381

2009-01-01

Abstract:In this paper a simple parameter extraction method is proposed. The extraction method is applied to extract parameters from the measured or simulated S-parameters of on-chip inductors fabricated with SMIC 0.18 Â¿m CMOS RF technology. The result shows a good agreement with the measured or simulated data over a wide frequency range without any optimization.
Ultra Deep Submicron Device Modeling and the Model Parameter Extraction Based Upon the BSIM3

陈松涛,刘晓彦,杜刚,韩汝琦

DOI: https://doi.org/10.3969/j.issn.1000-3819.2003.04.006

2003-01-01

Abstract:We present the st udy of ultra deep submicron MOSFET compa ct modeling for circuit simulation.Then a MOSFET compact model based on the BSIM 3 is developed.In this model,quantum eff ects and polysilicon depletion effects h ave been taken into account.Furthermore, a model parameter extraction program for threshold voltage and I-V model param et er is developed.It uses the least square method and adopts the Marquardt algorit hm to reduce the extracted result depend ence on the initial value.Moreover,the e xtracted parameter can be revised and op timized.In the end,the model and the par ameter extraction result are validated r epectively.
An SOI MOSFET Model for Analog Circuit Design

Huai-lin LIAO,Xing ZHANG,Ru HUANG,Yang-Yuan WANG

DOI: https://doi.org/10.3321/j.issn:0253-4177.2001.03.017

2001-01-01

Abstract:A physics-based model for SOI MOSFET has been presented,which is suitable for the design of analog integrated circuits.The model is proved to be of the fundamental properties,such as charge conservation,MOSFET source-to-drain intrinsic symmetry,continuity and conversion in derivatives of drain current and natural transition between the fully-depleted mode and the partially-depleted one of SOI MOSFET.At the same time,some second order effects of deep submicron devices have been described,such as DIBL(Drain Induced Barrier Lower Effect),carrier velocity overshoot and self heating.The accuracy of the presented model has been verified by the experimental data of SOI MOSFET with various geometry.
A Complete Small-Signal MOSFET Model and Parameter Extraction Technique for Millimeter Wave Applications

Yang Cao,Wei Zhang,Jun Fu,Quan Wang,Linlin Liu,Ao Guo

DOI: https://doi.org/10.1109/jeds.2019.2900202

2019-01-01

IEEE Journal of the Electron Devices Society

Abstract:In this paper, we propose a parameter extraction method for a complete MOSFET small signal equivalent circuit model addressing nearly all the parasitic and non-quasi-static (NQS) effects. Extraction and de-embedding of drain/source/gate series resistances and the substrate network are found to be necessary for obtaining the intrinsic elements of the small-signal equivalent circuit. We demonstrate for the first time, a step-by-step procedure for the extraction and de-embedding of the extrinsic model parameters directly from measurements. As a result, a precise intrinsic parameters derivation in the saturation region is presented. Moreover, for the intrinsic small signal equivalent circuit, a gate drain branch is supplemented in parallel to describe parasitic gate-drain coupling under high frequency up to 60 GHz together with the NQS effects. Finally, the presented parameter extraction method is verified by comparing with the corresponding measurement data from the 40-nm RF CMOS process of Shanghai Huali Microelectronics Corporation.
Parameter Extraction Of Bsim Based On S(3)Theory

Xj Dou,Lx Zhang,J Yang,Lj Ji,J Gu

DOI: https://doi.org/10.1109/ICASIC.2001.982662

2001-01-01

Abstract:We develop a novel algorithm for parameter extraction of semiconductor devices in this paper. The S' algorithm, which is functional for NP-Hard problems in the discrete space, is applied to the parameter extraction of BSIM (Berkeley Short-channel IGFET Model). By using this algorithm, a relatively large number of model parameters can be optimized globally and extracted simultaneously. As to BSIM1, two distinct S' smoothing strategies, accompanied by the LS-NR method, are used to extract the parameters. In contrast to the result we got by using the LS-NR method alone, the one after the introduction of these strategies is improved greatly.
Fully depleted short-channel SOI LDD/LDS MDSFET model for VLSI circuits analysis

Xuemei Xi,Yangyuan Wang

1996-01-01

Tien Tzu Hsueh Pao/Acta Electronica Sinica

Abstract:A physical model for the fully depleted short-channel LDD/LDS SOI MOSFET model is developed, which expands the previous thin-film SOI MOSFET model, focusing on channel-length modulation when the SOI MOSFET operates in the saturation region, and the influences of LDD/LDS structure on primary SOI MOSFET I-V characteristics. The model has a good agreement with experimental results. Moreover, the model describes primary MOSFET model and LDD/LDS structure's effects separately with simple formula and easy parameters extraction, which facilitates the implementation of this model into circuit simulators such as SPICE.
RF Characterization and Small Signal Extraction of 28nm FDSOI MOSFETs up to 110GHz

Seungkyeong Lee,Songcheol Hong,Xuejing Yang,Kyounghoon Yang

DOI: https://doi.org/10.23919/apmc55665.2022.9999821

2022-11-29

Abstract:Accurate RF characterization and small-signal parameter extraction for 28nm fully depleted silicon on insulator (FDSOI) MOSFETs is presented in this paper. At first, to deembed the on-chip external elements of the device test structure associated with the RF pads and access interconnect lines, a hybrid cascade de-embedding method was applied. Then, the complete extrinsic and intrinsic small-signal parameters of the device were extracted at multi bias points based on the direct parameter extraction approach. To verify the model validity, the Sparameters of FDSOI NMOS devices with a 28nm gate-length were measured and characterized by comparing the measured and modeled data. It is found that the proposed de-embedding and small-signal model provide a good agreement in the characterization of the FDSOI MOSFETs up to 110GHz.

Physics,Engineering
MOSFET Parameters Extraction in VDSM ULSI CAD with a Parallel-Programming Strategy

M Jiang,B Yang,L Zhang,LJ Ji,YY Wang

DOI: https://doi.org/10.1109/icasic.2001.982653

2001-01-01

Abstract:In this paper, we develop an efficient optimization algorithm for MOSFET parameter extraction in VDSM ULSI circuit design, which combines a search-space smoothing strategy, smoothes a large number of local barriers and makes conventional heuristic searching much more efficient. The experiment was implemented with a parallel programming strategy on a distributed multi-computer system with improved computing efficiency. With such an algorithm, we can obtain global solutions much more easily and more accurately than conventional searching algorithms, and parameter extraction automation can make it possible to synthesize simple analog circuits with a small number of transistors.
Two-dimensional numerical simulation of deep submicron thin-film SOI MOSFET

Xing Zhang,Yongquan Shi,Cheng Huang

1995-01-01

Tien Tzu Hsueh Pao/Acta Electronica Sinica

Abstract:A two-dimensional simulator has been developed for thin film submicron and deep submicron SOI MOSFET. In order to improve the calculation efficiency, the dynamic method of two steps has been used to solve Poisson's equation and the current continuity equations for electrons and holes. The differences between the characteristics and working mechanisms of thin film SOI MOSFET and thick film SOI MOSFET have been analyzed by the simulator. It was found that almost all of the characteristics of thin film deep submicron SOI MOSFET have been improved. The simulation results are in agreement with experimental result.
A Highly Automated and Rapid Datasheet Driven Empirical Modeling Process of SiC MOSFETs with High Accuracy and Robust Convergence.

Zhenbo Rao,Yan Wang

DOI: https://doi.org/10.1109/ASICON58565.2023.10396547

2023-01-01

Abstract:This paper presents a datasheet-driven SPICE model and corresponding automated extraction process for Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). The proposed SPICE model introduces an equivalent circuit that capture the intrinsic physical mechanisms of the devices and each circuit element is described by non-segmented empirical formulas. A differential evolution (DE) algorithm is adopted for automated model parameters extraction. We have validated the model by comparing the simulation results with datasheets from two mainstream SiC MOSFET devices vendors. Results show that the RMS errors are less that 7% under different bias and temperatures. The model's convergence was further confirmed through simulation of a three-phase full-bridge inverter circuit.
An Efficient Nonlinear Capacitance Model for SOIFET Used As A Switch

Jiefeng Zhou,Sichen Yang,Chenghan Wu,Erping Li

DOI: https://doi.org/10.1109/icmmt52847.2021.9618279

2021-01-01

Abstract:Silicon-on-insulator field effect transistors (SOIFETs) are used in various radio frequency antenna switches with their superior performance. The nonlinearity of the SOIFETs produces unwanted harmonics with a certain excitation signal, which generates the electromagnetic radiation spurious emission (RSE) problem. This paper proposes an efficient inter-electrode nonlinear capacitance model to predict the nonlinear behavior for SOIFET used as a switch. The capacitance expressions between the SOIFET gate-source, gate-drain and gate-substrate are calculated by the voltage-current characteristics. As a consequence, the predicted fundamental, second and third harmonic power results from the inter-electrode nonlinear capacitance model are close to the test results obtained from the nonlinear test system. This proves that the method can provide guideline in designing process.
Direct Extraction Methods for RF Characterization of Extrinsic Parasitic Parameters in 28 nm FDSOI MOSFETs Up to 110 GHz

Xuejing Yang,Kyounghoon Yang

DOI: https://doi.org/10.1109/jeds.2024.3486736

2024-11-09

IEEE Journal of the Electron Devices Society

Abstract:In this paper, we report on newly introduced direct extraction methods applied for determining the extrinsic parasitic capacitances and inductances in RF test structures of Fully-Depleted-Silicon-On-Insulator (FDSOI) MOSFETs with a 28 nm gate length. Our approach leverages dummy structures and employs closed-form extraction techniques for precise parasitic parameter determination. Notably, we apply the closed-form extraction strategy for the first time to quantify the parasitic inductances of RF FDSOI-MOSFETs. To verify the accuracy of our extraction results based on a direct approach without optimization, we perform error analysis by comparing the modeled S-parameters of the small signal equivalent circuit to the measured results. Good agreement between the modeled and measured results not only at the cold bias but also at the saturation-mode operation region is achieved up to 110 GHz.

engineering, electrical & electronic
Modeling of Sic Mosfet in Matlab/Simulink

Yang Cao,Liqiang Yuan,Kainan Chen,Zhengming Zhao,Ting Lu,Fanbo He

DOI: https://doi.org/10.1109/itec-ap.2014.6941012

2014-01-01

Abstract:New power semiconductor devices, such as SiC MOSFET, have widely fascinated people in recent years. They are playing more and more important roles in modern power electronic converters. Most of current SiC MOSFET models are implemented in simple simulator, such as PSPICE, and have problems in some applications, for example, the accuracy of these models can not satisfy the demand with the increasing of main circuit complexity. A novel model of SiC MOSFET implemented in Matlab/Simulink is proposed in this paper, where its physical mechanism of the device is considered. Firstly the model is established based on its static and transient characteristics. Then the parameters in the model are extracted. And finally simulation and experiment results are compared to validate the model.
BSIM Model Research and Recent Progress

He Jin,Chan Mansun,Xi Xuemei,Wan Hui,Pin Su,Ali Niknejad,Hu Chenming

DOI: https://doi.org/10.3969/j.issn.1674-4926.2006.03.002

2006-01-01

Chinese Journal of Semiconductors

Abstract:: The continued development of CMOS technology and the emergence of new applications demand continued improvement and enhancement of compact models. This paper outlines the recent work of the BSIM project at the University of California,Berkeley,including BSIM5 research,BSIM4 enhancements,and BSIMSOI development. BSIM5 addresses the needs of nano-CMOS technology and RF high-speed CMOS circuit simulation. BSIM4 is a mature industrial standard MOSFET model with several improvements to meet the technology requirements.BSIMSOI is developed into a generic model framework for PD and FD SOI technology. An operation mode choice, via the calculation of the body potential△Vbi and body current/charge, helps circuit designers in the trend of the coexistence of PD and FD devices.

CMOS/SOI ICs simulation and parameter extraction

TFSOI/CMOS ICs simulation using SPICE

A new small-signal parameter extraction approach for SOI MOSFET

Nonlinear Modeling of RF Switch Based on COMSOL Parameter Extraction

Accurate Small Signal Modeling and Extraction of Silicon Mosfet for Rf Ic Application

Integrated device and circuit simulation of thin film deep submicron CMOS/SOI circuits

New physical I-V model of deep-submicron FD SOI MOSFETs for analogue/digital circuit simulation

A simple parameter extraction method for on-chip inductors

Ultra Deep Submicron Device Modeling and the Model Parameter Extraction Based Upon the BSIM3

An SOI MOSFET Model for Analog Circuit Design

A Complete Small-Signal MOSFET Model and Parameter Extraction Technique for Millimeter Wave Applications

Parameter Extraction Of Bsim Based On S(3)Theory

Fully depleted short-channel SOI LDD/LDS MDSFET model for VLSI circuits analysis

RF Characterization and Small Signal Extraction of 28nm FDSOI MOSFETs up to 110GHz

MOSFET Parameters Extraction in VDSM ULSI CAD with a Parallel-Programming Strategy

Two-dimensional numerical simulation of deep submicron thin-film SOI MOSFET

A Highly Automated and Rapid Datasheet Driven Empirical Modeling Process of SiC MOSFETs with High Accuracy and Robust Convergence.

An Efficient Nonlinear Capacitance Model for SOIFET Used As A Switch

Direct Extraction Methods for RF Characterization of Extrinsic Parasitic Parameters in 28 nm FDSOI MOSFETs Up to 110 GHz

Modeling of Sic Mosfet in Matlab/Simulink

BSIM Model Research and Recent Progress