Abstract:In this paper, the novel Quasi-SOI CMOS architecture is fabricated based on bulk Si substrate for the first time. The whole fabrication is basically compatible with the conventional CMOS technology. The path of the draininduced barrier lowering (DIBL) effect can be effectively suppressed by the "L-Type" insulator surrounding the source and drain in Quasi-SOI MOSFET. Such device structure can effectively suppress the short-channel effects (SCEs) and prevent the transistor from the bulk punch-through. The leakage current will not increase with the high doping concentration of the substrate due to the absence of P/N junctions surrounding the S/D regions which brings more flexibility on the modulation of the threshold voltage. Moreover, the influence of process-induced variations on the new transistor performance and implications for manufacturing processes comparing with UTB SOI MOSFET are also studied by simulations in order to investigate the sensitivity of the important characteristics to the device crucial physical parameter fluctuations introduced by the process. The results show that Quasi-SOI MOSFET can be more tolerant of process-induced variation for the deep nanometer scale regime. The highly manufacturable Quasi-SOI MOSFET which can combine the advantages of ultra-thin body (UTB) SOI MOSFET and bulk silicon device can be considered as a promising candidate for highly scaled devices.

Study on self-aligned silicide CMOS/SOI technology

Self-aligned Silicides for Ohmic Contacts in Complementary Metal–oxide–semiconductor Technology: TiSi2, CoSi2, and NiSi

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Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Study on the application of silicide in surface micromachining

Electrical Characterization of SIMOX SOI Wafers with MOSOS C-V Measurements

Experimental investigation of Quasi-SOI MOSFET for highly scaled devices

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Investigation of Thermal Property of Novel DSOI MOSFETs Fabricated with Local SIMOX Technique

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The Influence of Silicide Technique on the Device Performance for Deep Sub-Micro Pmosfets

Improved Super Junction LDMOS Transistors on Thin Film SOI to Suppress Substrate-assisted Depletion Effects

The Investigation of Key Technologies for Sub-0.1-μm CMOS Device Fabrication

IC Simulations of the On-chip Integration for SOI CMOS and MEMS

Quasi-Soi Mosfet: A Novel Architecture Combining the Advantages of Soi and Bulk Devices

Metal Silicides In Advanced Complementary Metal-Oxide-Semiconductor (Cmos) Technology

Study of infrared zone-melting-recrystallization (ZMR) SOI GexSi1-x alloy channel P-MOSFET's

Study of the SOI LDMOS with Low Conduction Loss and Less Gate Charge

Advantages and challenges of high performance CMOS on SOI