Investigation of Nonlinearity in RF Metal Contacts Induced by the Tunneling Effect

Xuan Chen,Wenchao Chen,Junhui Chen,Sichen Yang,Liang Tian,Yiqun Niu,Huali Duan,Erping Li
DOI: https://doi.org/10.1109/temc.2023.3314804
IF: 2.036
2024-01-01
IEEE Transactions on Electromagnetic Compatibility
Abstract:Nonlinearity, widely existing in passive radio frequency (RF) devices, can distort the signals in the communication system and draw increasing attention in satellite communication, 5G, and future 6G communication. The nonlinearity in RF metal contacts is theoretically and experimentally investigated in this article. First, the tunneling current and the thermionic emission current induced by the native oxide film on the metal surface are numerically calculated by exploiting the Wentzel-Kramers-Brillouin method. The spectrum characteristics of the nonlinear current are investigated and analyzed. Then, an equivalent circuit for the RF metal contact is established based on the mechanical and electric parameters as well as the surface topographic parameters. The equivalent circuit is used for nonlinearity investigation and the second/third-order harmonics are simulated. The proposed method can provide good agreement with the third-order harmonic of experiments when the input power varies from 17.5 to 27.5 dBm. The simulated results reveal that the nonlinearity can be reduced by a relatively thick oxide film, which can be used to suppress nonlinearity by intentionally introducing a thick oxide film. Our methods provide a way for RF nonlinearity analysis and design.
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