Abstract:We experimentally demonstrate that the dominant mechanism of single-event transients in silicon-germanium heterojunction bipolar transistors (SiGe HBTs) can change with decreasing temperature from +20 °C to −180 °C. This is accomplished by using a new well-designed cryogenic experimental system suitable for a pulsed-laser platform. Firstly, when the temperature drops from +20 °C to −140 °C, the increased carrier mobility drives a slight increase in transient amplitude. However, as the temperature decreases further below −140 °C, the carrier freeze-out brings about an inflection point, which means the transient amplitude will decrease at cryogenic temperatures. To better understand this result, we analytically calculate the ionization rates of various dopants at different temperatures based on Altermatt’s new incomplete ionization model. The parasitic resistivities with temperature on the charge-collection pathway are extracted by a two-dimensional (2D) TCAD process simulation. In addition, we investigate the impact of temperature on the novel electron-injection process from emitter to base under different bias conditions. The increase of the emitter–base junction’s barrier height at low temperatures could suppress this electron-injection phenomenon. We have also optimized the built-in voltage equations of a high current compact model (HICUM) by introducing the impact of incomplete ionization. The present results and methods could provide a new reference for effective evaluation of single-event effects in bipolar transistors and circuits at cryogenic temperatures, and could provide a new evidence of the potential of SiGe technology in applications in extreme cryogenic environments.

Experimental Characterization of Proton Radiated SiGe Power HBTs at Extreme Temperatures.

RF characteristics of proton radiated large-area SiGe HBTs at extreme temperatures.

Dc characteristics of proton radiated SiGe power HBTs at cryogenic temperature

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

Heavy Ion Micro-Beam Study of Single-Event Transient(set) in Si Ge Heterjunction Bipolar Transistor

Operation of Silicon-Germanium Heterojunction Bipolar Transistors with Different Structures at Deep Cryogenic Temperature.

Effects of neutron irradiation on SiGe HBT and Si BJT devices

Electrical performance of electron irradiated SiGe HBT and SiBJT

Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications

Irradiation effects of 25MeV silicon ions on SiGe heterojunction bipolar transistors

Electrical Performance Analysis of Electron Irradiated SiGe HBT and Si BJT

Experimental Study on Pulse Neutron and Gamma Ray Irradiation Effects on SiGe HBT

The Total-Dose-effects of Gamma and Proton Irradiations on High-Voltage Silicon–germanium Heterojunction Bipolar Transistors

Simulation and analysis of the single event transient characteristics of SiGe HBT at low-temperature environment

Design and Fabrication of High Speed NPN SiGe Heterojunction Bipolar Transistor

The reliability of SiGe HBT under swift heavy ion irradiation

Degradation and Annealing Characteristics of NPN SiGe HBT Exposed to Heavy Ions Irradiation

Power characteristics of SiGe heterojunction bipolar transistor at 900 MHz

Study on Ionization Damage of Silicon-Germanium Heterojunction Bipolar Transistors at Various Dose Rates

Irradiation Effects on DC Current Gain of SiGe HBT