Abstract:The silicon-germanium heterojunction bipolar transistor (SiGe HBT) is the first practical bandgap-engineered device to be realized in silicon. SiGe HBT technology combines transistor performance competitive with III-V technologies with the processing maturity, integration levels, yield, and hence, cost commonly associated with conventional Si fabrication. In the ten-and-one-half years since the first demonstration of a functional transistor, SiGe HBT technology has emerged from the research laboratory, entered manufacturing on 200-mm wafers, and is poised to enter the commercial RF and microwave market. State-of-the-art SiGe HBT's can deliver: (1) f/sub T/ in excess of 50 GHz; (2) f/sub max/ in excess of 70 GHz; (3) minimum noise figure below 0.7 dB at 2.0 GHz; (4) 1/f noise corner frequencies below 500 Hz; (5) cryogenic operation; (6) excellent radiation hardness; (7) competitive power amplifiers; and (8) reliability comparable to Si. A host of record-setting digital, analog, RF, and microwave circuits have been demonstrated in the past several years using SiGe HBT's, and recent work on passives and transmission lines on Si suggest a migratory path to Si-based monolithic microwave integrated circuits (MMIC's) is possible. The combination of SiGe HBT's with advanced Si CMOS to form an SiGe BiCMOS technology represents a unique opportunity for Si-based RF system-on-a-chip solutions. This paper reviews state-of-the-art SiGe HBT technology and assesses its potential for current and future RF and microwave systems.

Power characteristics of SiGe heterojunction bipolar transistor at 900 MHz

900 Mhz 7.4 Wsige Heterojunction Bipolar Transistor

Impact of Ge Profile on Main Electrical Characteristics of SiGe

Design and Fabrication of High Speed NPN SiGe Heterojunction Bipolar Transistor

GaAs heterojunction bipolar transistor device and IC technology for high-performance analog and microwave applications

30 finger microwave power SiGe HBT with 23 V BVCBO and fT 7 GHz

Experiments and Comparisons of Power to Failure for SiGe-Based Low-Noise Amplifiers under High-Power Microwave Pulses

Development of SiGe/Si Film Heterojunction Bipolar Transistors

A 60GHz power amplifier with 12.1 dBm & P1dBCP in 0.18um SiGe BiCMOS process

Research for SiGe HBT

Polysilicon Emitter Double Mesa Microwave Power SiGe HBT

Development on Si/SiGe heterojunction bipolar transistors

SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications

Cascadable direct-coupled wideband SiGe HBT MMIC [amplifier]

A Darlington SiGe Microwave Monolithic Integrated Circuit

Study of the SiGe HBT Based on the Self-Alignment and Air-Bridge

Comparison Between Mbe-Based Sige/Si Hbt And Si-Based Bipolar Transistor Technologies

Cascadable Direct-Coupled Wideband Sige Hbt Mmic

Dc characteristics of proton radiated SiGe power HBTs at cryogenic temperature

Experimental Characterization of Proton Radiated SiGe Power HBTs at Extreme Temperatures.

Study on the Characteristics of the SiGe NPN HBT with Novel Structure