Abstract:The silicon-germanium heterojunction bipolar transistor (SiGe HBT) is the first practical bandgap-engineered device to be realized in silicon. SiGe HBT technology combines transistor performance competitive with III-V technologies with the processing maturity, integration levels, yield, and hence, cost commonly associated with conventional Si fabrication. In the ten-and-one-half years since the first demonstration of a functional transistor, SiGe HBT technology has emerged from the research laboratory, entered manufacturing on 200-mm wafers, and is poised to enter the commercial RF and microwave market. State-of-the-art SiGe HBT's can deliver: (1) f/sub T/ in excess of 50 GHz; (2) f/sub max/ in excess of 70 GHz; (3) minimum noise figure below 0.7 dB at 2.0 GHz; (4) 1/f noise corner frequencies below 500 Hz; (5) cryogenic operation; (6) excellent radiation hardness; (7) competitive power amplifiers; and (8) reliability comparable to Si. A host of record-setting digital, analog, RF, and microwave circuits have been demonstrated in the past several years using SiGe HBT's, and recent work on passives and transmission lines on Si suggest a migratory path to Si-based monolithic microwave integrated circuits (MMIC's) is possible. The combination of SiGe HBT's with advanced Si CMOS to form an SiGe BiCMOS technology represents a unique opportunity for Si-based RF system-on-a-chip solutions. This paper reviews state-of-the-art SiGe HBT technology and assesses its potential for current and future RF and microwave systems.

A Darlington SiGe Microwave Monolithic Integrated Circuit

Cascadable Direct-Coupled Wideband Sige Hbt Mmic

An Ultra Broadband DC-40GHz 4-Bit GaAs Phemt MMIC Digital Attenuator

Cascadable direct-coupled wideband SiGe HBT MMIC [amplifier]

A 12-Mw 40–60-Ghz 0.18- $\mu {\hbox {m}}$ BiCMOS Oscillator-Less Self-Demodulator for Short-Range Software-Defined Transceivers

Design of Differential Variable-Gain Transimpedance Amplifier in 0.18 Μm SiGe BiCMOS

SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications

30 finger microwave power SiGe HBT with 23 V BVCBO and fT 7 GHz

Power characteristics of SiGe heterojunction bipolar transistor at 900 MHz

A 2.1–2.5 GHz high linearity and low noise down-conversion active mixer

A 60GHz power amplifier with 12.1 dBm & P1dBCP in 0.18um SiGe BiCMOS process

MMIC LNA Based Novel Composite-Channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaNHEMTs

An MMIC LNA for Millimeter-Wave Radar and 5G Applications with GaN-on-SiC Technology

130-GHz gain-enhanced SiGe low noise amplifier

0.18 Micron BiCMOS Process with Novel Structure SiGeC HBT

900 Mhz 7.4 Wsige Heterojunction Bipolar Transistor

An Efficient 24-30 GHz GaN-on-Si Driver Amplifier Using Synthesized Matching Networks

A Low-power, High-gain and Excellent Noise Figure GaN-on-SiC LNA Monolithic Microwave Integrated Circuit (MMIC) operating at Ka-band for 5G/6G Application

A Compact Hybrid G-band Heterodyne Receiver Integrated with Millimeter Microwave Integrated Circuits and Schottky Diode-Based Circuits

Robust Ku-Band GaN Low-Noise Amplifier MMIC

A Broadband GaN Power Amplifier MMIC Utilizing a Non-Uniform Distributed Topology