X-Band High-Efficiency Continuous Class B Power Amplifier Gan Mmic Assisted By Input Second-Harmonic Tuning

Chen Jin,Yuan Gao,Wei Chen,Jianhua Huang,Zhiyu Wang,Jiongjiong Mo,Faxin Yu

DOI: https://doi.org/10.3390/electronics8111312

IF: 2.9

2019-01-01

Electronics

Abstract:This paper presents a high-efficiency continuous class B power amplifier MMIC (Monolithic Microwave Integrated Circuit) from 8 GHz to 10.5 GHz, fabricated with 0.25 mu m GaN-on-SiC technology. The Pedro load-line method was performed to calculate the optimum load of the GaN field-effect transistor (FET) for efficiency enhancement. Optimized by an output second-harmonic tuned network, fundamental to second-harmonic impedance, mapping was established point-to-point within a broad frequency band, which approached the classic continuous class B mode with an expanded high-efficiency bandwidth. Moreover, the contribution to the output capacitance of the FET was introduced into the output second-harmonic tuned network, which simplified the structure of the output matching network. Assisted by the second-harmonic source-pull technique, the input second-harmonic tuned network was optimized to improve the efficiency of the power amplifier over the operation band. The measurement results showed 51-59% PAE (Power Added Efficiency) and 19.8-21.2 dB power gain with a saturated power of 40.8-42.2 dBm from 8 GHz to 10.5 GHz. The size of the chip was 3.2 x 2.4 mm(2).