Abstract:We demonstrate a low-power (Pdc) 25.5–30.7 GHz CMOS variable-gain amplifier (VGA). The VGA constitutes a common-source (CS) input stage (M1), followed by current-reused CS gain (M2) and output stages (M3). Transistors M1-M3 adopt the topology of B-to-D with RB, i.e., body terminal is connected to drain via a large resistance RB, for body self-forward-bias and floating (BSFBF). This leads to gain boosting and NF reduction of the VGA at the same Pdc due to larger transconductance gm (because of larger bias current) and smaller bias voltage, and effective suppression of the substrate leakage and noise. Simultaneous input and noise matching are achieved by suitable selection of the size and bias of M1, and the inductance of Lg1 and L1. Analog switch transistor M4 is in parallel with M3 to tune its overdrive (VOV) and drain-source voltage (VDS) for fine tuning of S21. Digital switch transistor M5 (in conjunction with the series coupling capacitance CC and resonant inductance L10) is in parallel with M2 to control its AC VDS for coarse tuning of S21. In the case of M5 being turned-on, the series of CC-M5-L10 is close to a short-circuit (~ 4.6 Ω) at the output node of M2 over the 3-dB gain bandwidth (f3dB) of 18.4–30.7 GHz. This leads to S21 tuning range boosting. Moreover, M4-M5 adopt DTMOS with RB, i.e., body of M4-M5 is connected to gate via RB, for BSFBF to lower the on-state channel resistance (Rch) and increase the off-state Rch. Further S21 tuning range boosting is attained. The VGA consumes 9 mW, and achieves S21 of 15.4 ± 1.5 dB for 18.4–30.7 GHz, tuning range of 29.8 dB (15.5 ~ − 14.3 dB) at 28 GHz, average NF (NFavg) of 2.79 dB for 18–31 GHz, and figure-of-merit (FOM) of 2.24 GHz. The NFavg and FOM are one of the best results ever reported for wideband VGAs/LNAs with Pdc lower than 10 mW. The eminent results of the VGA indicate it is suitable for 28 GHz 5G systems.

Design of Differential Variable-Gain Transimpedance Amplifier in 0.18 Μm SiGe BiCMOS

Linear-in-decibel Variable Gain Amplifier Design in 0.18µm SIGE BICMOS Technology

An Inductorless 5-GHz Differential Dual Regulated Cross-Cascode Transimpedance Amplifier using 40 nm CMOS

A Wideband Digital Variable Gain Amplifier with DC Offset Cancellation in SiGe 0.18µm BiCMOS Technology

A novel accurate dB-linear control circuit topology for variable gain amplifiers in BiCMOS technology

A Wideband BiCMOS Variable Gain Amplifier with Novel Continuous Db-Linear Gain Control and Temperature Compensation

A 0.96-mW dB-Linear Variable Gain Amplifier With 0.4-dB Linearity Error Over a 62.4-dB Gain Tuning Range

A compact, fully differential D-band CMOS amplifier in 65nm CMOS

An Inductorless Transimpedance Amplifier Design for 10 Gb/s Optical Communication Using 0.18-Μm CMOS

A Three Stage, Fully Differential 128–157 GHz CMOS Amplifier with Wide Band Matching

A Wideband Db-Linear VGA with Temperature Compensation and Active Load

A 2.5 Gb/s CMOS Low Noise Transimpedance Amplifier with Active Feedback

An Accurate Db-Linear CMOS VGA Based on Double Duplicate Biasing Technique

Compact 50-62 GHz Current-Reused Low-Noise Amplifier with Gate-Drain Transformer Feedback

60 GHz CMOS Amplifiers Using Transformer-Coupling and Artificial Dielectric Differential Transmission Lines for Compact Design

DC-2 GHz Bandwidth High-Precision Variable Gain Amplifier Based on 0.18 μm BiCMOS Technology

Inductor-Less Low-Power Low-Voltage Cross-Coupled Regulated-Cascode Transimpedance Amplifier Circuit in CMOS Technology

Design and Analysis of 9-mW 25.5–30.7-GHz CMOS Variable-Gain Amplifier Using Body-Floating Gain-and-Noise-Enhancement Technique

Optimization Design of Transimpedance Amplifier for PDIC

A Compact V-Band Temperature Compensation Low-Noise Amplifier in a 130 nm SiGe BiCMOS Process