GaAs heterojunction bipolar transistor device and IC technology for high-performance analog and microwave applications
M.E. Kim,A.K. Oki,G.M. Gorman,D.K. Umemoto,J.B. Camou
DOI: https://doi.org/10.1109/22.32211
IF: 4.3
1989-01-01
IEEE Transactions on Microwave Theory and Techniques
Abstract:GaAs-AlGaAs n-p-n heterojunction bipolar transistor (GaAs HBT) technology and its application to analog and microwave functions for high-performance military and commercial systems are discussed. In many applications the GaAs HBT offers key advantages over the alternative advanced silicon bipolar and III-V compound field-effect-transistor (FET) approaches. TRW's GaAs HBT device and IC fabrication process, basic HBT DC and RF performance, examples of applications, and technology qualification work are presented and serve as a basis for addressing general capability issues. A related 3- mu m emitter-up, self-aligned HBT IC process provides excellent DC and RF performance, with simultaneous gain-bandwidth product, f/sub T/, and maximum frequency of oscillation, f/sub max/, of approximately 20-40 GHz and DC current gain beta approximately=50-100 at useful collector current densities approximately=3-10 kA/cm/sup 2/, early voltage approximately=500-1000 V, and MSI-LSI integration levels. These capabilities facilitate versatile DC-20-GHz analog/microwave as well as 3-6 Gb/s digital applications, 2-3 G sample/s A/D conversion, and single-chip multifunctions with producibility.<>
engineering, electrical & electronic