A 300ghz Monolithic Integrated Amplifier In 0.5-Mu M Inp Double Heterojunction Bipolar Transistor Technology

Sun Yan,Cheng Wei,Lu Hai Yan,Chen Ya Pei,Wang Yuan,Zhang Yong,Kong Yue Chan,Chen Tang Sheng
DOI: https://doi.org/10.1109/icmmt.2018.8563862
2018-01-01
Abstract:We present a compact, 6-stage terahertz monolithic integrated circuit (TMIC) amplifier with an operating frequency of 275-310GHz, formed by commom-base configured 0.5 um InP Double Heterojunction Bipolar Transistor (DHBT) and a multilayer thin-film microstrip (TFM) wiring environment. The amplifier small signal gain exhibits >7.4dB at 300GHz. The peak gain is 12.5dB at 280GHz. This is the first time reported InP DHBT TMIC amplifier operating in H-band employing TFM in china. The total size of this 6-stage amplifier is only 1.7 mm x0.9 mm.
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